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シリコン表面の非熱的応力緩和とその微細構造
http://hdl.handle.net/2241/6758
http://hdl.handle.net/2241/6758ca861a5c-179f-4ffa-a3b5-8db4197fd394
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A2847.pdf (175.1 kB)
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1.pdf (8.5 MB)
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Item type | Thesis or Dissertation(1) | |||||
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公開日 | 2007-07-25 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Athermal stress release of silicon surface and the microscopic structure | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | シリコン表面の非熱的応力緩和とその微細構造 | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_db06 | |||||
タイプ | doctoral thesis | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
成島, 哲也
× 成島, 哲也 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A new mechanism of recrystallization is presented in this thesis by using irradiation of very low energy electron on the disordered surfaces of Si. The recrystallization was observed by means of two experimental methods from both the macroscopic point of view and also from the microscopic one: surface stress measurement and Scanning Tunneling Microscopy. It was found that the recrystallization is dominated not by thermal activation mechanism,but by non-thermal mechanism induced by irradiated electrons. It is well known that thermal annealing at high temperatures can recrystallize a surface disordered layer and release the surface stress of the disordered layer. However, ... | |||||
言語 | en | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Includes bibliographical references | |||||
言語 | en | |||||
書誌情報 |
発行日 2002 |
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取得学位 | ||||||
学位名 | 博士(理学) | |||||
取得学位 | ||||||
学位名 | Doctor of Philosophy in Science | |||||
学位授与大学 | ||||||
学位授与機関識別子Scheme | kakenhi | |||||
学位授与機関識別子 | 12102 | |||||
言語 | ja | |||||
学位授与機関名 | 筑波大学 | |||||
言語 | en | |||||
学位授与機関名 | University of Tsukuba | |||||
学位授与年度 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 2001 | |||||
学位授与年月日 | ||||||
学位授与年月日 | 2002-03-25 | |||||
報告番号 | ||||||
学位授与番号 | 甲第2847号 |