@phdthesis{oai:tsukuba.repo.nii.ac.jp:00008287,
 author = {成島, 哲也 and Narushima, Tetsuya},
 month = {},
 note = {A new mechanism of recrystallization is presented in this thesis by using irradiation of very low energy electron on the disordered surfaces of Si. The recrystallization was observed by means of two experimental methods from both the macroscopic point of view and also from the microscopic one: surface stress measurement and Scanning Tunneling Microscopy. It was found that the recrystallization is dominated not by thermal activation mechanism,but by non-thermal mechanism induced by irradiated electrons. It is well known that thermal annealing at high temperatures can recrystallize a surface disordered layer and release the surface stress of the disordered layer. However, ..., 2001, Includes bibliographical references},
 school = {筑波大学, University of Tsukuba},
 title = {Athermal stress release of silicon surface and the microscopic structure},
 year = {2002}
}