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Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics
http://hdl.handle.net/2241/00159449
http://hdl.handle.net/2241/001594499c4acba4-b6a0-4b9a-bfa2-0b6c3f27e735
名前 / ファイル | ライセンス | アクション |
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AM_31-42 (2.4 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2020-01-20 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
岡田, 晋
× 岡田, 晋× Ji, Hyun Goo× Solís‐Fernández, Pablo× Yoshimura, Daisuke× Maruyama, Mina× Endo, Takahiko× Miyata, Yasumitsu× Ago, Hiroki |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm(2) V(-1)s(-1) for holes and electrons, respectively, which are much higher than those of the pristine WSe2. The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (approximate to 0.17 nW). Furthermore, a p-n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC-based advanced electronics. | |||||
書誌情報 |
en : Advanced Materials 巻 31, 号 42, p. 1903613, 発行日 2019-10 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0935-9648 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10742128 | |||||
PubMed番号 | ||||||
識別子タイプ | PMID | |||||
関連識別子 | 31475400 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1002/adma.201903613 | |||||
権利 | ||||||
権利情報 | © 2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim | |||||
著者版フラグ | ||||||
値 | author | |||||
出版者 | ||||||
出版者 | WILEY-VCH Verlag GmbH |