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{"_buckets": {"deposit": "09518b6d-8fb2-473c-be7a-3d4690e120c9"}, "_deposit": {"id": "39001", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "39001"}, "status": "published"}, "_oai": {"id": "oai:tsukuba.repo.nii.ac.jp:00039001", "sets": ["494", "1717", "3044"]}, "item_5_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-09", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "88", "bibliographicPageStart": "86", "bibliographicVolumeNumber": "122", "bibliographic_titles": [{"bibliographic_title": "Scripta Materialia"}]}]}, "item_5_creator_3": {"attribute_name": "著者別名", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "都甲, 薫"}], "nameIdentifiers": [{"nameIdentifier": "663", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "30611280", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000030611280"}, {"nameIdentifier": "0000003027", "nameIdentifierScheme": "筑波大学研究者総覧", "nameIdentifierURI": "http://trios.tsukuba.ac.jp/researcher/0000003027"}]}, {"creatorNames": [{"creatorName": "末益, 崇"}], "nameIdentifiers": [{"nameIdentifier": "126", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "40282339", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000040282339"}, {"nameIdentifier": "0000000714", "nameIdentifierScheme": "筑波大学研究者総覧", "nameIdentifierURI": "http://trios.tsukuba.ac.jp/researcher/0000000714"}]}]}, "item_5_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Metal-induced crystallization has allowed for high-quality Si and Ge thin films on insulators at low temperatures; however, there has been difficulty for SiGe alloys of intermediate compositions. Here we demonstrate a large-grained (\u003e 100 μm), 99% (111)-oriented Si0.4Ge0.6 layer on a glass substrate through layer exchange between Al and amorphous Si0.4Ge0.6 layers. Slow annealing below 350 °C is a key to suppressing nucleation and facilitating lateral growth. The use of the (111)-oriented SiGe layers as epitaxial templates will pave the way for integrating various materials monolithically on three-dimensional Si large-scale integrated circuits and on multi-functional displays.", "subitem_description_type": "Abstract"}]}, "item_5_publisher_27": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_5_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1016/j.scriptamat.2016.05.025", "subitem_relation_type_select": "DOI"}}]}, "item_5_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2016."}, {"subitem_rights": "This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/."}]}, "item_5_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_5_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1359-6462 ", "subitem_source_identifier_type": "ISSN"}]}, "item_5_source_id_9": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA11067905 ", "subitem_source_identifier_type": "NCID"}]}, "item_5_subject_20": {"attribute_name": "NIIサブジェクト", "attribute_value_mlt": [{"subitem_subject": "基礎工学・応用物理学 ", "subitem_subject_scheme": "Other"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nakata, Mitsuki"}], "nameIdentifiers": [{"nameIdentifier": "141497", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Toko, Kaoru"}], "nameIdentifiers": [{"nameIdentifier": "141498", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Saitoh, Noriyuki"}], "nameIdentifiers": [{"nameIdentifier": "141499", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yoshizawa, Noriko "}], "nameIdentifiers": [{"nameIdentifier": "141500", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Suemasu, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "141501", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-10-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "SM_122.pdf", "filesize": [{"value": "403.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_11", "mimetype": "application/pdf", "size": 403700.0, "url": {"label": "SM_122", "url": "https://tsukuba.repo.nii.ac.jp/record/39001/files/SM_122.pdf"}, "version_id": "b8823b27-6b5d-4516-b4e0-14e0f3f179fd"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization"}]}, "item_type_id": "5", "owner": "1", "path": ["494", "1717", "3044"], "permalink_uri": "http://hdl.handle.net/2241/00143669", "pubdate": {"attribute_name": "公開日", "attribute_value": "2016-08-24"}, "publish_date": "2016-08-24", "publish_status": "0", "recid": "39001", "relation": {}, "relation_version_is_last": true, "title": ["Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization"], "weko_shared_id": 5}
Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization
http://hdl.handle.net/2241/00143669
http://hdl.handle.net/2241/00143669f56d38e4-f388-48e0-b7c8-8f8b9fa93d36
名前 / ファイル | ライセンス | アクション |
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SM_122 (403.7 kB)
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Item type | Journal Article(1) | |||||
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公開日 | 2016-08-24 | |||||
タイトル | ||||||
タイトル | Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Nakata, Mitsuki
× Nakata, Mitsuki× Toko, Kaoru× Saitoh, Noriyuki× Yoshizawa, Noriko× Suemasu, Takashi |
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著者別名 |
都甲, 薫
× 都甲, 薫× 末益, 崇 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Metal-induced crystallization has allowed for high-quality Si and Ge thin films on insulators at low temperatures; however, there has been difficulty for SiGe alloys of intermediate compositions. Here we demonstrate a large-grained (> 100 μm), 99% (111)-oriented Si0.4Ge0.6 layer on a glass substrate through layer exchange between Al and amorphous Si0.4Ge0.6 layers. Slow annealing below 350 °C is a key to suppressing nucleation and facilitating lateral growth. The use of the (111)-oriented SiGe layers as epitaxial templates will pave the way for integrating various materials monolithically on three-dimensional Si large-scale integrated circuits and on multi-functional displays. | |||||
書誌情報 |
Scripta Materialia 巻 122, p. 86-88, 発行日 2016-09 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1359-6462 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11067905 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.scriptamat.2016.05.025 | |||||
権利 | ||||||
権利情報 | © 2016. | |||||
権利 | ||||||
権利情報 | This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/. | |||||
著者版フラグ | ||||||
値 | author | |||||
出版者 | ||||||
出版者 | Elsevier |