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Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization
http://hdl.handle.net/2241/00143669
f56d38e4-f388-48e0-b7c8-8f8b9fa93d36
名前 / ファイル | ライセンス | Actions | |
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item type | Journal Article(1) | |||||
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公開日 | 2016-08-24 | |||||
タイトル | ||||||
タイトル | Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
タイプ | journal article | |||||
著者 |
Nakata, Mitsuki
× Nakata, Mitsuki× Toko, Kaoru× Saitoh, Noriyuki× Yoshizawa, Noriko× Suemasu, Takashi |
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著者別名 |
都甲, 薫
× 都甲, 薫× 末益, 崇 |
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抄録 | ||||||
内容記述 | Metal-induced crystallization has allowed for high-quality Si and Ge thin films on insulators at low temperatures; however, there has been difficulty for SiGe alloys of intermediate compositions. Here we demonstrate a large-grained (> 100 μm), 99% (111)-oriented Si0.4Ge0.6 layer on a glass substrate through layer exchange between Al and amorphous Si0.4Ge0.6 layers. Slow annealing below 350 °C is a key to suppressing nucleation and facilitating lateral growth. The use of the (111)-oriented SiGe layers as epitaxial templates will pave the way for integrating various materials monolithically on three-dimensional Si large-scale integrated circuits and on multi-functional displays. | |||||
書誌情報 |
Scripta Materialia 巻 122, p. 86-88, 発行日 2016-09 |
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ISSN | ||||||
収録物識別子 | 1359-6462 | |||||
書誌レコードID | ||||||
収録物識別子 | AA11067905 | |||||
DOI | ||||||
関連識別子 | ||||||
関連識別子 | 10.1016/j.scriptamat.2016.05.025 | |||||
権利 | ||||||
権利情報 | © 2016. | |||||
権利 | ||||||
権利情報 | This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/. | |||||
著者版フラグ | ||||||
値 | author | |||||
出版者 | ||||||
出版者 | Elsevier |