{"_buckets": {"deposit": "09518b6d-8fb2-473c-be7a-3d4690e120c9"}, "_deposit": {"id": "39001", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "39001"}, "status": "published"}, "_oai": {"id": "oai:tsukuba.repo.nii.ac.jp:00039001"}, "item_5_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2016-09", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "88", "bibliographicPageStart": "86", "bibliographicVolumeNumber": "122", "bibliographic_titles": [{"bibliographic_title": "Scripta Materialia"}]}]}, "item_5_creator_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "\u90fd\u7532, \u85ab"}], "nameIdentifiers": [{"nameIdentifier": "663", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "30611280", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000030611280"}, {"nameIdentifier": "0000003027", "nameIdentifierScheme": "\u7b51\u6ce2\u5927\u5b66\u7814\u7a76\u8005\u7dcf\u89a7", "nameIdentifierURI": "http://trios.tsukuba.ac.jp/researcher/0000003027"}]}, {"creatorNames": [{"creatorName": "\u672b\u76ca, \u5d07"}], "nameIdentifiers": [{"nameIdentifier": "126", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "40282339", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000040282339"}, {"nameIdentifier": "0000000714", "nameIdentifierScheme": "\u7b51\u6ce2\u5927\u5b66\u7814\u7a76\u8005\u7dcf\u89a7", "nameIdentifierURI": "http://trios.tsukuba.ac.jp/researcher/0000000714"}]}]}, "item_5_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Metal-induced crystallization has allowed for high-quality Si and Ge thin films on insulators at low temperatures; however, there has been difficulty for SiGe alloys of intermediate compositions. Here we demonstrate a large-grained (\u003e 100 \u03bcm), 99% (111)-oriented Si0.4Ge0.6 layer on a glass substrate through layer exchange between Al and amorphous Si0.4Ge0.6 layers. Slow annealing below 350 \u00b0C is a key to suppressing nucleation and facilitating lateral growth. The use of the (111)-oriented SiGe layers as epitaxial templates will pave the way for integrating various materials monolithically on three-dimensional Si large-scale integrated circuits and on multi-functional displays.", "subitem_description_type": "Abstract"}]}, "item_5_publisher_27": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_5_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1016/j.scriptamat.2016.05.025", "subitem_relation_type_select": "DOI"}}]}, "item_5_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2016."}, {"subitem_rights": "This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/."}]}, "item_5_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_5_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1359-6462 ", "subitem_source_identifier_type": "ISSN"}]}, "item_5_source_id_9": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA11067905 ", "subitem_source_identifier_type": "NCID"}]}, "item_5_subject_20": {"attribute_name": "NII\u30b5\u30d6\u30b8\u30a7\u30af\u30c8", "attribute_value_mlt": [{"subitem_subject": "\u57fa\u790e\u5de5\u5b66\u30fb\u5fdc\u7528\u7269\u7406\u5b66 ", "subitem_subject_scheme": "Other"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nakata, Mitsuki"}], "nameIdentifiers": [{"nameIdentifier": "141497", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Toko, Kaoru"}], "nameIdentifiers": [{"nameIdentifier": "141498", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Saitoh, Noriyuki"}], "nameIdentifiers": [{"nameIdentifier": "141499", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yoshizawa,  Noriko "}], "nameIdentifiers": [{"nameIdentifier": "141500", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Suemasu, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "141501", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2018-10-01"}], "displaytype": "detail", "download_preview_message": "", "filename": "SM_122.pdf", "filesize": [{"value": "403.7 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_11", "mimetype": "application/pdf", "size": 4037000, "url": {"label": "SM_122", "url": "https://tsukuba.repo.nii.ac.jp/record/39001/files/SM_122.pdf"}, "version_id": "b8823b27-6b5d-4516-b4e0-14e0f3f179fd"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization"}]}, "item_type_id": "5", "owner": "1", "path": ["117/494", "117/1717", "3/62/5601/3044"], "permalink_uri": "http://hdl.handle.net/2241/00143669", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2016-08-24"}, "publish_date": "2016-08-24", "publish_status": "0", "recid": "39001", "relation": {}, "relation_version_is_last": true, "title": ["Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization"], "weko_shared_id": 5}