{"created":"2021-03-01T07:18:14.599028+00:00","id":39001,"links":{},"metadata":{"_buckets":{"deposit":"09518b6d-8fb2-473c-be7a-3d4690e120c9"},"_deposit":{"id":"39001","owners":[],"pid":{"revision_id":0,"type":"depid","value":"39001"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00039001","sets":["117:1717","117:494","3:62:5601:3044"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-09","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"88","bibliographicPageStart":"86","bibliographicVolumeNumber":"122","bibliographic_titles":[{"bibliographic_title":"Scripta Materialia"}]}]},"item_5_creator_3":{"attribute_name":"著者別名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"都甲, 薫"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"末益, 崇"}],"nameIdentifiers":[{},{},{}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Metal-induced crystallization has allowed for high-quality Si and Ge thin films on insulators at low temperatures; however, there has been difficulty for SiGe alloys of intermediate compositions. Here we demonstrate a large-grained (> 100 μm), 99% (111)-oriented Si0.4Ge0.6 layer on a glass substrate through layer exchange between Al and amorphous Si0.4Ge0.6 layers. Slow annealing below 350 °C is a key to suppressing nucleation and facilitating lateral growth. The use of the (111)-oriented SiGe layers as epitaxial templates will pave the way for integrating various materials monolithically on three-dimensional Si large-scale integrated circuits and on multi-functional displays.","subitem_description_type":"Abstract"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.scriptamat.2016.05.025","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2016."},{"subitem_rights":"This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/."}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1359-6462 ","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11067905 ","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakata, Mitsuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Toko, Kaoru"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Saitoh, Noriyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoshizawa,  Noriko "}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Suemasu, Takashi"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-10-01"}],"displaytype":"detail","filename":"SM_122.pdf","filesize":[{"value":"403.7 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"SM_122","url":"https://tsukuba.repo.nii.ac.jp/record/39001/files/SM_122.pdf"},"version_id":"b8823b27-6b5d-4516-b4e0-14e0f3f179fd"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization"}]},"item_type_id":"5","owner":"1","path":["494","1717","3044"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-08-24"},"publish_date":"2016-08-24","publish_status":"0","recid":"39001","relation_version_is_last":true,"title":["Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization"],"weko_creator_id":"1","weko_shared_id":5},"updated":"2022-04-27T10:00:19.498566+00:00"}