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Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment
http://hdl.handle.net/2241/00143411
http://hdl.handle.net/2241/00143411faebea08-60c5-4e12-8bab-eff7f825c112
名前 / ファイル | ライセンス | アクション |
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APLM_4-5 (4.3 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2016-07-27 | |||||
タイトル | ||||||
タイトル | Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Zhu, W.
× Zhu, W.× Mitchell, B.× Timmerman, D.× Uedono, A.× Koizumi, A.× Fujiwara, Y. |
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著者別名 |
上殿, 明良
× 上殿, 明良 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. The optimal growth temperature was determined to be 960 °C and was used to fabricate a GaN-based red light-emitting diode with a significantly higher output power. | |||||
書誌情報 |
APL Materials 巻 4, 号 5, p. 056103, 発行日 2016-05 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2166-532X | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/1.4950826 | |||||
権利 | ||||||
権利情報 | © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
出版者 | AIP Publishing |