@article{oai:tsukuba.repo.nii.ac.jp:00038741,
 author = {上殿, 明良 and Zhu, W. and Mitchell, B. and Timmerman, D. and Uedono, A. and Koizumi, A. and Fujiwara, Y.},
 issue = {5},
 journal = {APL Materials},
 month = {May},
 note = {The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. The optimal growth temperature was determined to be 960 °C and was used to fabricate a GaN-based red light-emitting diode with a significantly higher output power.},
 title = {Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment},
 volume = {4},
 year = {2016}
}