{"created":"2021-03-01T07:17:57.475260+00:00","id":38741,"links":{},"metadata":{"_buckets":{"deposit":"6b6e9350-c2f8-4eca-b07b-3ae6a833fe32"},"_deposit":{"id":"38741","owners":[],"pid":{"revision_id":0,"type":"depid","value":"38741"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00038741","sets":["117:5066","3:62:5296:2536"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2016-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageStart":"056103","bibliographicVolumeNumber":"4","bibliographic_titles":[{"bibliographic_title":"APL Materials"}]}]},"item_5_creator_3":{"attribute_name":"著者別名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上殿, 明良"}],"nameIdentifiers":[{},{},{}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The influence of growth temperature on the surface morphology and luminescence properties of Eu-doped GaN layers grown by organometallic vapor phase epitaxy was investigated. By using a Eu source that does not contain oxygen in its molecular structure, and varying the growth temperature, the local defect environment around the Eu3+ ions was manipulated, yielding a higher emission intensity from the Eu3+ ions and a smoother sample surface. The optimal growth temperature was determined to be 960 °C and was used to fabricate a GaN-based red light-emitting diode with a significantly higher output power.","subitem_description_type":"Abstract"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.4950826","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)."}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2166-532X","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Zhu, W."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mitchell, B."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Timmerman, D."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Uedono, A."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Koizumi, A."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujiwara, Y."}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-07-27"}],"displaytype":"detail","filename":"APLM_4-5.pdf","filesize":[{"value":"4.3 MB"}],"format":"application/pdf","licensetype":"license_6","mimetype":"application/pdf","url":{"label":"APLM_4-5","url":"https://tsukuba.repo.nii.ac.jp/record/38741/files/APLM_4-5.pdf"},"version_id":"2463620c-7144-4dfc-a930-22e1d9accaae"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment"}]},"item_type_id":"5","owner":"1","path":["5066","2536"],"pubdate":{"attribute_name":"公開日","attribute_value":"2016-07-27"},"publish_date":"2016-07-27","publish_status":"0","recid":"38741","relation_version_is_last":true,"title":["Enhanced photo/electroluminescence properties of Eu-doped GaN through optimization of the growth temperature and Eu related defect environment"],"weko_creator_id":"1","weko_shared_id":5},"updated":"2022-04-27T09:08:38.464871+00:00"}