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シリコン中での注入重水素の巨視的移動
http://hdl.handle.net/2241/6894
http://hdl.handle.net/2241/689452643ea2-3cf2-4b5b-aa35-1815b1d519cc
名前 / ファイル | ライセンス | アクション |
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A2065.pdf (151.6 kB)
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1.pdf (1.9 MB)
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Item type | Thesis or Dissertation(1) | |||||
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公開日 | 2007-07-25 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Macroscopic migration of implanted deuterium in silicon | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | シリコン中での注入重水素の巨視的移動 | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_db06 | |||||
タイプ | doctoral thesis | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
片渕, 竜也
× 片渕, 竜也 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We have studied the formation mechanism of the ring-like flaking in silicon implanted with deuterium ions. It is the first observations of the decrease of implanted-deuterium concentrations. The decrease of implanted-deuterium concentrations was observed above an irradiation dose of 5.4 × 1017D/c㎡. The present observations have been made by measureing the deuterium concentration using the nuclear reaction 2H(d,p)3H. The dependence of a critical dose for the first flaking on several parameters has also been measured. on several parameters has also been measured. In order to understand the surfaced flaking mechanism and the macroscopic migration of implanted deuterium, we have proposed a new model based on the percolation of gas bubbles. The macroscopic migration of implanted deuterium gives the most probable interpretation of the generation of the ring-like flaking pattern on the irradiated surface. | |||||
言語 | en | |||||
書誌情報 |
発行日 1999 |
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取得学位 | ||||||
学位名 | 博士(理学) | |||||
取得学位 | ||||||
学位名 | Doctor of Philosophy in Science | |||||
学位授与大学 | ||||||
学位授与機関識別子Scheme | kakenhi | |||||
学位授与機関識別子 | 12102 | |||||
言語 | ja | |||||
学位授与機関名 | 筑波大学 | |||||
言語 | en | |||||
学位授与機関名 | University of Tsukuba | |||||
学位授与年度 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 1998 | |||||
学位授与年月日 | ||||||
学位授与年月日 | 1999-03-25 | |||||
報告番号 | ||||||
学位授与番号 | 甲第2065号 |