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Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition
http://hdl.handle.net/2241/00143391
d8d19c31-3cd5-4a19-b271-c0a83043ab5d
名前 / ファイル | ライセンス | Actions | |
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item type | Journal Article(1) | |||||
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公開日 | 2016-07-26 | |||||
タイトル | ||||||
タイトル | Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
タイプ | journal article | |||||
著者 |
Miyazaki, Kenichi
× Miyazaki, Kenichi× Shibuya, Keisuke× Suzuki, Megumi× Sakai, Kenichi× Fujita, Jun-ichi× Sawa, Akihito |
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著者別名 |
藤田, 淳一
× 藤田, 淳一 |
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抄録 | ||||||
内容記述 | We investigated the effects of chromium (Cr) and niobium(Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2filmgrown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers. | |||||
書誌情報 |
AIP Advances 巻 6, 号 5, p. 055012, 発行日 2016-05 |
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ISSN | ||||||
収録物識別子 | 2158-3226 | |||||
DOI | ||||||
関連識別子 | ||||||
関連識別子 | 10.1063/1.4949757 | |||||
権利 | ||||||
権利情報 | © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
出版者 | American Institute of Physics |