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Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
http://hdl.handle.net/2241/00142018
http://hdl.handle.net/2241/00142018bdc70977-7729-4486-b220-ddd22faac632
名前 / ファイル | ライセンス | アクション |
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APL_108-7.pdf (847.9 kB)
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Item type | Journal Article(1) | |||||||||||
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公開日 | 2016-06-02 | |||||||||||
タイトル | ||||||||||||
言語 | en | |||||||||||
タイトル | Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
資源タイプ | ||||||||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
タイプ | journal article | |||||||||||
アクセス権 | ||||||||||||
アクセス権 | open access | |||||||||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||
著者 |
奥村, 宏典
× 奥村, 宏典
WEKO
133158
× Martin, Denis× Malinverni, Marco× Grandjean, Nicolas |
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書誌情報 |
en : Applied Physics Letters 巻 108, 号 7, p. 072102, 発行日 2016-02 |
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ISSN | ||||||||||||
収録物識別子タイプ | PISSN | |||||||||||
収録物識別子 | 0003-6951 | |||||||||||
書誌レコードID | ||||||||||||
収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA00543431 | |||||||||||
DOI | ||||||||||||
関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.1063/1.4942369 | |||||||||||
権利 | ||||||||||||
言語 | en | |||||||||||
権利情報 | © 2016 AIP Publishing LLC. | |||||||||||
権利 | ||||||||||||
言語 | en | |||||||||||
権利情報 | This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 108, 072102 (2016) and may be found at http://dx.doi.org/10.1063/1.4942369. | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | VoR | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
出版者 | ||||||||||||
言語 | en | |||||||||||
出版者 | AIP Publishing |