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Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations
http://hdl.handle.net/2241/00122245
7024038f-3328-483c-abe9-6fc2e9ef1ba4
名前 / ファイル | ライセンス | Actions | |
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item type | Journal Article(1) | |||||
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公開日 | 2014-10-20 | |||||
タイトル | ||||||
タイトル | Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
タイプ | journal article | |||||
著者 |
Yoshida, Katsuhisa
× Yoshida, Katsuhisa× Shibamiya, Toru× Sano, Nobuyuki |
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著者別名 |
佐野, 伸行
× 佐野, 伸行 |
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抄録 | ||||||
内容記述 | We study the dynamical Coulomb interaction under the junctionless transistor (JLT) structures, in which high doping concentration is inevitable to obtain good device performance, by employing the self-consistent Monte Carlo simulations. The power spectra of potential fluctuations in the source and drain regions show clear peaks corresponding to the plasma frequencies in those regions. This observation justifies the accuracy of the present simulations. The dynamical Coulomb interaction degrades the drain current and, thus, is inevitable to predict accurate device performance of JLTs. | |||||
書誌情報 |
Applied physics letters 巻 105, 号 3, p. 033501, 発行日 2014-07 |
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ISSN | ||||||
収録物識別子 | 0003-6951 | |||||
書誌レコードID | ||||||
収録物識別子 | AA00543431 | |||||
DOI | ||||||
関連識別子 | ||||||
関連識別子 | 10.1063/1.4890695 | |||||
権利 | ||||||
権利情報 | © 2014 AIP Publishing LLC. | |||||
権利 | ||||||
権利情報 | This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 105, 033501 (2014) and may be found at http://dx.doi.org/10.1063/1.4890695. | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
出版者 | American Institute of Physics |