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  1. 数理物質系 (Faculty of Pure and Applied Sciences)
  2. 佐野 伸行 (Sano Nobuyuki)
  1. コンテンツタイプ (Contents Type)
  2. 雑誌発表論文等 (Journal article, etc.)
  3. A~
  4. Applied physics letters

Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations

http://hdl.handle.net/2241/00122245
7024038f-3328-483c-abe9-6fc2e9ef1ba4
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APL_105-3.pdf APL_105-3 (952.7 kB)
item type Journal Article(1)
公開日 2014-10-20
タイトル
タイトル Effect of dynamical Coulomb interaction on junctionless transistor performance: Monte Carlo study of plasmon excitations
言語
言語 eng
資源タイプ
タイプ journal article
著者 Yoshida, Katsuhisa

× Yoshida, Katsuhisa

WEKO 108306

Yoshida, Katsuhisa

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Shibamiya, Toru

× Shibamiya, Toru

WEKO 108307

Shibamiya, Toru

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Sano, Nobuyuki

× Sano, Nobuyuki

WEKO 108308

Sano, Nobuyuki

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著者別名 佐野, 伸行

× 佐野, 伸行

WEKO 39
e-Rad 90282334
筑波大学研究者総覧 0000000707

佐野, 伸行

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抄録
内容記述 We study the dynamical Coulomb interaction under the junctionless transistor (JLT) structures, in which high doping concentration is inevitable to obtain good device performance, by employing the self-consistent Monte Carlo simulations. The power spectra of potential fluctuations in the source and drain regions show clear peaks corresponding to the plasma frequencies in those regions. This observation justifies the accuracy of the present simulations. The dynamical Coulomb interaction degrades the drain current and, thus, is inevitable to predict accurate device performance of JLTs.
書誌情報 Applied physics letters

巻 105, 号 3, p. 033501, 発行日 2014-07
ISSN
収録物識別子 0003-6951
書誌レコードID
収録物識別子 AA00543431
DOI
関連識別子
関連識別子 10.1063/1.4890695
権利
権利情報 © 2014 AIP Publishing LLC.
権利
権利情報 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 105, 033501 (2014) and may be found at http://dx.doi.org/10.1063/1.4890695.
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出版者
出版者 American Institute of Physics
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