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Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer
http://hdl.handle.net/2241/00121570
http://hdl.handle.net/2241/00121570eff80bb9-e8e5-46ed-b238-33a5efb7efc4
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TSF_557-143.pdf (273.0 kB)
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| Item type | Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2014-06-26 | |||||
| タイトル | ||||||
| タイトル | Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 著者 |
Numata, Ryohei
× Numata, Ryohei× 都甲, 薫× Nakazawa, Koki× Usami, Noritaka× 末益, 崇 |
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| 書誌情報 |
en : Thin solid films 巻 557, p. 143-146, 発行日 2014-04 |
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| ISSN | ||||||
| 収録物識別子タイプ | PISSN | |||||
| 収録物識別子 | 0040-6090 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00863068 | |||||
| DOI | ||||||
| 関連タイプ | isVersionOf | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1016/j.tsf.2013.08.040 | |||||
| 権利情報 | ||||||
| 言語 | en | |||||
| 権利情報 | © 2013 Elsevier B.V. | |||||
| 権利情報 | ||||||
| 言語 | en | |||||
| 権利情報 | NOTICE: this is the author’s version of a work that was accepted for publication in Thin Solid Films. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Thin Solid Films,557,2014. http://dx.doi.org/10.1016/j.tsf.2013.08.040 | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| 言語 | en | |||||
