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Large-Grained Polycrystalline (111) Ge Films on Insulators by Thickness-Controlled Al-Induced Crystallization
http://hdl.handle.net/2241/120426
http://hdl.handle.net/2241/120426ddab0f3a-ab52-45a7-9a95-864d12a69bfa
名前 / ファイル | ライセンス | アクション |
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JSS_2-11pdf.pdf (2.0 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2013-12-19 | |||||
タイトル | ||||||
タイトル | Large-Grained Polycrystalline (111) Ge Films on Insulators by Thickness-Controlled Al-Induced Crystallization | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Nakazawa, K.
× Nakazawa, K.× Toko, K.× Saitoh, N.× Yoshizawa, N.× Usami, N.× Suemasu, T. |
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著者別名 |
都甲, 薫
× 都甲, 薫× 末益, 崇 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Low-temperature (350°C) crystallization of amorphous Ge films on SiO2 was investigated using Al-induced layer exchange (ALILE) process. Thicknesses of Ge and catalytic Al layers were varied in the range of 30–300 nm, which strongly influenced the ALILE growth morphology. Based on the study, the Ge thickness was adjusted to 40 nm while the Al thickness was adjusted 50 nm. This sample satisfied both of the surface coverage of polycrystalline-Ge and the annihilation of randomly oriented Ge regions. Moreover, the enhancement of the heterogeneous Ge nucleation improved the (111) orientation and the grain size. As a result, the area fraction of the (111)-orientation reached as high as 97% and the average grain size as large as 70-μm diameters. This (111)-oriented Ge layer with large-grains promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices. | |||||
書誌情報 |
ECS journal of solid state science and technology 巻 2, 号 11, p. Q195-Q199, 発行日 2013-08 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 2162-8769 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12582725 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1149/2.007311jss | |||||
権利 | ||||||
権利情報 | © 2013 The Electrochemical Society. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Journal of Solid State Science and Technology 2013, volume 2, issue 11. | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
出版者 | Electrochemical Society | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2241/120426 | |||||
識別子タイプ | HDL |