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Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
http://hdl.handle.net/2241/119793
http://hdl.handle.net/2241/1197938c8aefe0-fcc6-49c6-89c1-95a4dd8f7bde
名前 / ファイル | ライセンス | アクション |
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Item type | Journal Article(1) | |||||
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公開日 | 2013-10-02 | |||||
タイトル | ||||||
タイトル | Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
著者 |
Khan, M. Ajmal
× Khan, M. Ajmal× Hara, Kosuke O.× Nakamura, Kotaro× Du, Weijie× Baba, Masakazu× Toh, Katsuaki× Suzuno, Mitsushi× 都甲, 薫× Usami, Noritaka× 末益, 崇 |
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書誌情報 |
en : Journal of crystal growth 巻 378, p. 201-204, 発行日 2013-09 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0022-0248 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00696341 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2012.12.153 | |||||
権利情報 | ||||||
権利情報 | © 2013 Elsevier B.V. | |||||
権利情報 | ||||||
権利情報 | NOTICE: this is the author’s version of a work that was accepted for publication in Journal of crystal growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of crystal growth, 378, 2013 http://dx.doi.org/10.1016/j.jcrysgro.2012.12.153 | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版者 | ||||||
出版者 | Elsevier |