{"_buckets": {"deposit": "ae735d48-1c19-4d23-a054-ba79eabd4571"}, "_deposit": {"id": "29169", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "29169"}, "status": "published"}, "_oai": {"id": "oai:tsukuba.repo.nii.ac.jp:00029169"}, "item_5_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2013-06", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "192", "bibliographicPageStart": "189", "bibliographicVolumeNumber": "372", "bibliographic_titles": [{"bibliographic_title": "Journal of crystal growth"}]}]}, "item_5_creator_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "\u90fd\u7532, \u85ab"}], "nameIdentifiers": [{"nameIdentifier": "663", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "30611280", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000030611280"}, {"nameIdentifier": "0000003027", "nameIdentifierScheme": "\u7b51\u6ce2\u5927\u5b66\u7814\u7a76\u8005\u7dcf\u89a7", "nameIdentifierURI": "http://trios.tsukuba.ac.jp/researcher/0000003027"}]}, {"creatorNames": [{"creatorName": "\u672b\u76ca, \u5d07"}], "nameIdentifiers": [{"nameIdentifier": "126", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "40282339", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000040282339"}, {"nameIdentifier": "0000000714", "nameIdentifierScheme": "\u7b51\u6ce2\u5927\u5b66\u7814\u7a76\u8005\u7dcf\u89a7", "nameIdentifierURI": "http://trios.tsukuba.ac.jp/researcher/0000000714"}]}]}, "item_5_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "High-quality crystalline Ge thin films on low-cost glass substrates are desired to reduce the fabrication cost of high-efficiency tandem solar cells. We applied an Al-induced crystallization technique to amorphous-Ge films (50-nm thickness) on SiO2 glass substrates. The annealing temperature of the sample strongly influenced the grain size and the crystal orientation in the grown polycrystalline Ge layers: low annealing temperatures resulted in large grains and high (111)-orientation fractions. As a result, annealing at 325 \u00b0C provided 98% (111)-oriented grains with average diameters of 30 \u03bcm. Moreover, the grown Ge layers could be used as an epitaxial template for chemical vapor deposition. This large-grained Ge film on a SiO2 substrate appears promising for use as a Ge light-absorbing layer, as well as an epitaxial buffer layer for group III\u2013V compound semiconductors.", "subitem_description_type": "Abstract"}]}, "item_5_identifier_34": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2241/119443"}]}, "item_5_publisher_27": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Elsevier B.V."}]}, "item_5_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1016/j.jcrysgro.2013.03.031", "subitem_relation_type_select": "DOI"}}]}, "item_5_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2013 Elsevier B.V."}, {"subitem_rights": "NOTICE: this is the author\u2019s version of a work that was accepted for publication in Journal of crystal growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of crystal growth, Volume 372, 2013, DOI:10.1016/j.jcrysgro.2013.03.031"}]}, "item_5_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_5_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-0248", "subitem_source_identifier_type": "ISSN"}]}, "item_5_source_id_9": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00696341", "subitem_source_identifier_type": "NCID"}]}, "item_5_subject_20": {"attribute_name": "NII\u30b5\u30d6\u30b8\u30a7\u30af\u30c8", "attribute_value_mlt": [{"subitem_subject": "\u57fa\u790e\u5de5\u5b66\u30fb\u5fdc\u7528\u7269\u7406\u5b66", "subitem_subject_scheme": "Other"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Toko, Kaoru"}], "nameIdentifiers": [{"nameIdentifier": "100922", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Fukata, Naoki"}], "nameIdentifiers": [{"nameIdentifier": "100923", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nakazawa, Koki"}], "nameIdentifiers": [{"nameIdentifier": "100924", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kurosawa, Masashi"}], "nameIdentifiers": [{"nameIdentifier": "100925", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Usami, Noritaka"}], "nameIdentifiers": [{"nameIdentifier": "100926", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Miyao, Masanobu"}], "nameIdentifiers": [{"nameIdentifier": "100927", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Suemasu, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "100928", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2013-12-25"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JCG_372.pdf", "filesize": [{"value": "381.1 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 381100.0, "url": {"label": "JCG_372.pdf", "url": "https://tsukuba.repo.nii.ac.jp/record/29169/files/JCG_372.pdf"}, "version_id": "39625513-6770-4fb2-a025-ab1c2dbd53e3"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates"}]}, "item_type_id": "5", "owner": "1", "path": ["117/494", "117/1717", "3/62/5592/414"], "permalink_uri": "http://hdl.handle.net/2241/119443", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2013-06-27"}, "publish_date": "2013-06-27", "publish_status": "0", "recid": "29169", "relation": {}, "relation_version_is_last": true, "title": ["Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates"], "weko_shared_id": 5}