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Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon
http://hdl.handle.net/2241/118073
http://hdl.handle.net/2241/1180739f8435ba-5f3d-4319-8d39-dd96fec256f8
名前 / ファイル | ライセンス | アクション |
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JAP_112-8.pdf (1.4 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2012-12-18 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
Hara, K. O.
× Hara, K. O.× Usami, N.× Toh, K.× Baba, M.× 都甲, 薫× 末益, 崇 |
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書誌情報 |
en : Journal of applied physics 巻 112, 号 08, p. 083108, 発行日 2012-10 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0021-8979 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.4759246 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2012 American Institute of Physics. | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 112, 083108 (2012) and may be found at http://jap.aip.org/resource/1/japiau/v112/i8/p083108_s1 | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Institute of Physics |