{"_buckets": {"deposit": "c49aff1f-3a6f-4055-8017-b1a4825f58b8"}, "_deposit": {"id": "18522", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "18522"}, "status": "published"}, "_oai": {"id": "oai:tsukuba.repo.nii.ac.jp:00018522"}, "item_5_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2005-12", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "24", "bibliographicPageStart": "245209", "bibliographicVolumeNumber": "72", "bibliographic_titles": [{"bibliographic_title": "Physical review B"}]}]}, "item_5_creator_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "\u6751\u4e0a, \u6d69\u4e00"}], "nameIdentifiers": [{"nameIdentifier": "66587", "nameIdentifierScheme": "WEKO"}]}]}, "item_5_description_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_5_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "The formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of 10B with 11B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.", "subitem_description_type": "Abstract"}]}, "item_5_identifier_34": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2241/104168"}]}, "item_5_publisher_27": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "The American Physical Society"}]}, "item_5_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1103/PhysRevB.72.245209", "subitem_relation_type_select": "DOI"}}]}, "item_5_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2005 The American Physical Society"}]}, "item_5_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_5_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "1098-0121", "subitem_source_identifier_type": "ISSN"}]}, "item_5_source_id_9": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA11187113", "subitem_source_identifier_type": "NCID"}]}, "item_5_subject_20": {"attribute_name": "NII\u30b5\u30d6\u30b8\u30a7\u30af\u30c8", "attribute_value_mlt": [{"subitem_subject": "\u57fa\u790e\u5de5\u5b66\u30fb\u5fdc\u7528\u7269\u7406\u5b66", "subitem_subject_scheme": "Other"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Fukata, N."}], "nameIdentifiers": [{"nameIdentifier": "66580", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Fukuda, S."}], "nameIdentifiers": [{"nameIdentifier": "66581", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sato, S."}], "nameIdentifiers": [{"nameIdentifier": "66582", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ishioka, K."}], "nameIdentifiers": [{"nameIdentifier": "66583", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kitajima, M."}], "nameIdentifiers": [{"nameIdentifier": "66584", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hishita, T."}], "nameIdentifiers": [{"nameIdentifier": "66585", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Murakami, K."}], "nameIdentifiers": [{"nameIdentifier": "66586", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2013-12-20"}], "displaytype": "detail", "download_preview_message": "", "filename": "PRB_72-24.pdf", "filesize": [{"value": "994.2 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 9942000, "url": {"label": "PRB_72-24.pdf", "url": "https://tsukuba.repo.nii.ac.jp/record/18522/files/PRB_72-24.pdf"}, "version_id": "66b3de0d-abed-445a-8e3e-83d0426e2dd8"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms"}]}, "item_type_id": "5", "owner": "1", "path": ["117/144", "3/62/5598/82"], "permalink_uri": "http://hdl.handle.net/2241/104168", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_name_i18n": "\u516c\u958b\u65e5", "attribute_value": "2009-12-24"}, "publish_date": "2009-12-24", "publish_status": "0", "recid": "18522", "relation": {}, "relation_version_is_last": true, "title": ["Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms"], "weko_shared_id": null}