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Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms
http://hdl.handle.net/2241/104168
e7ecb860-6ce0-43dd-9631-47200e49408b
名前 / ファイル | ライセンス | Actions | |
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item type | Journal Article(1) | |||||
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公開日 | 2009-12-24 | |||||
タイトル | ||||||
タイトル | Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
タイプ | journal article | |||||
著者 |
Fukata, N.
× Fukata, N.× Fukuda, S.× Sato, S.× Ishioka, K.× Kitajima, M.× Hishita, T.× Murakami, K. |
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著者別名 |
村上, 浩一
× 村上, 浩一 |
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抄録 | ||||||
内容記述 | The formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of 10B with 11B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center. | |||||
書誌情報 |
Physical review B 巻 72, 号 24, p. 245209, 発行日 2005-12 |
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ISSN | ||||||
収録物識別子 | 1098-0121 | |||||
書誌レコードID | ||||||
収録物識別子 | AA11187113 | |||||
DOI | ||||||
関連識別子 | ||||||
関連識別子 | 10.1103/PhysRevB.72.245209 | |||||
権利 | ||||||
権利情報 | © 2005 The American Physical Society | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
出版者 | The American Physical Society |