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  1. 数理物質系 (Faculty of Pure and Applied Sciences)
  2. 村上 浩一 (Murakami Kouichi)
  1. コンテンツタイプ (Contents Type)
  2. 雑誌発表論文等 (Journal article, etc.)
  3. P~
  4. Physical review B

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

http://hdl.handle.net/2241/104168
e7ecb860-6ce0-43dd-9631-47200e49408b
プレビュー
名前 / ファイル ライセンス Actions
PRB_72-24.pdf PRB_72-24.pdf (994.2 kB)
item type Journal Article(1)
公開日 2009-12-24
タイトル
タイトル Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms
言語
言語 eng
資源タイプ
タイプ journal article
著者 Fukata, N.

× Fukata, N.

WEKO 66580

Fukata, N.

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Fukuda, S.

× Fukuda, S.

WEKO 66581

Fukuda, S.

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Sato, S.

× Sato, S.

WEKO 66582

Sato, S.

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Ishioka, K.

× Ishioka, K.

WEKO 66583

Ishioka, K.

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Kitajima, M.

× Kitajima, M.

WEKO 66584

Kitajima, M.

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Hishita, T.

× Hishita, T.

WEKO 66585

Hishita, T.

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Murakami, K.

× Murakami, K.

WEKO 66586

Murakami, K.

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著者別名 村上, 浩一

× 村上, 浩一

WEKO 66587

村上, 浩一

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抄録
内容記述 The formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of 10B with 11B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.
書誌情報 Physical review B

巻 72, 号 24, p. 245209, 発行日 2005-12
ISSN
収録物識別子 1098-0121
書誌レコードID
収録物識別子 AA11187113
DOI
関連識別子
関連識別子 10.1103/PhysRevB.72.245209
権利
権利情報 © 2005 The American Physical Society
著者版フラグ
値 publisher
出版者
出版者 The American Physical Society
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