{"_buckets": {"deposit": "b20ed072-cb5f-4b24-b356-6dc4a3b2b730"}, "_deposit": {"id": "16607", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "16607"}, "status": "published"}, "_oai": {"id": "oai:tsukuba.repo.nii.ac.jp:00016607"}, "item_5_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-01", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "4", "bibliographicPageStart": "042117", "bibliographicVolumeNumber": "92", "bibliographic_titles": [{"bibliographic_title": "APPLIED PHYSICS LETTERS"}]}]}, "item_5_creator_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "\u672b\u76ca, \u5d07"}], "nameIdentifiers": [{"nameIdentifier": "126", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "40282339", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000040282339"}, {"nameIdentifier": "0000000714", "nameIdentifierScheme": "\u7b51\u6ce2\u5927\u5b66\u7814\u7a76\u8005\u7dcf\u89a7", "nameIdentifierURI": "http://trios.tsukuba.ac.jp/researcher/0000000714"}]}]}, "item_5_description_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_5_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We have evaluated the diffusion length of minority carriers (holes) in single-crystalline n-type beta-FeSi2 bulk grown by chemical vapor transport by means of electron-beam-induced current (EBIC) technique in the edge-scan configuration. The EBIC line-scan data showed a clear exponential dependence of distance from the Al electrode. The diffusion length was estimated to be 20  \u00b5m at room temperature, and increased upon high-temperature annealing, reaching approximately 30  \u00b5m after annealing at 800  \u00b0C for 8  h. This result explained the improvement of photoresponsivity in the Al/n-beta-FeSi2 Schottky diodes by high-temperature annealing.", "subitem_description_type": "Abstract"}]}, "item_5_identifier_34": {"attribute_name": "URI", "attribute_value_mlt": [{"subitem_identifier_type": "HDL", "subitem_identifier_uri": "http://hdl.handle.net/2241/99947"}]}, "item_5_publisher_27": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "American Institute of Physics"}]}, "item_5_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/1.2835904", "subitem_relation_type_select": "DOI"}}]}, "item_5_rights_12": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "\u00a9 2008 American Institute of Physics"}]}, "item_5_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_5_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0003-6951", "subitem_source_identifier_type": "ISSN"}]}, "item_5_source_id_9": {"attribute_name": "\u66f8\u8a8c\u30ec\u30b3\u30fc\u30c9ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00543431", "subitem_source_identifier_type": "NCID"}]}, "item_5_subject_20": {"attribute_name": "NII\u30b5\u30d6\u30b8\u30a7\u30af\u30c8", "attribute_value_mlt": [{"subitem_subject": "\u96fb\u6c17\u96fb\u5b50\u5de5\u5b66", "subitem_subject_scheme": "Other"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ootsuka, Teruhisa"}], "nameIdentifiers": [{"nameIdentifier": "58793", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Suemasu, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "58794", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Chen, Jun"}], "nameIdentifiers": [{"nameIdentifier": "58795", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sekiguchi, Takashi"}], "nameIdentifiers": [{"nameIdentifier": "58796", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2013-12-19"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "APL-92_4.pdf", "filesize": [{"value": "201.6 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 201600.0, "url": {"label": "APL-92_4.pdf", "url": "https://tsukuba.repo.nii.ac.jp/record/16607/files/APL-92_4.pdf"}, "version_id": "437cd20e-c978-461a-98dd-d3df95c6d9ba"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Evaluation of minority-carrier diffusion length in n-type beta-FeSi2 single crystals by electron-beam-induced current", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Evaluation of minority-carrier diffusion length in n-type beta-FeSi2 single crystals by electron-beam-induced current"}]}, "item_type_id": "5", "owner": "1", "path": ["117/494", "3/62/5296/64"], "permalink_uri": "http://hdl.handle.net/2241/99947", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2008-07-14"}, "publish_date": "2008-07-14", "publish_status": "0", "recid": "16607", "relation": {}, "relation_version_is_last": true, "title": ["Evaluation of minority-carrier diffusion length in n-type beta-FeSi2 single crystals by electron-beam-induced current"], "weko_shared_id": 5}