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High-hole mobility Si1-xGex (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization
http://hdl.handle.net/2241/00155056
http://hdl.handle.net/2241/0015505654db5752-e245-4637-b444-90e54b690660
名前 / ファイル | ライセンス | アクション |
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JAC_766 (683.1 kB)
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Item type | Journal Article(1) | |||||
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公開日 | 2019-04-11 | |||||
タイトル | ||||||
タイトル | High-hole mobility Si1-xGex (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
末益, 崇
× 末益, 崇× 都甲, 薫× Takahara, D.× Yoshimine, R. |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The grain size and hole mobility of polycrystalline Si1-xGex thin films formed on glass by solid-phase crystallization were significantly improved after preparing the amorphous precursors by heating the substrate. By just controlling the deposition temperature of the precursors (50–350 °C) for each SiGe composition, the grain size reached over 2 μm across the whole composition range. Reflecting the enlargement of the grain size, the hole mobility values were improved by approximately one order of magnitude. These values are comparable to those of single-crystal SiGe formed by Ge condensation and are the highest among SiGe on insulators synthesized at low temperature (<900 °C). The SiGe on insulator technology obtained in this study will greatly contribute to the development of SiGe-based electronic and optical devices. | |||||
書誌情報 |
Journal of alloys and compounds 巻 766, p. 417-420, 発行日 2018-10 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 09258388 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10817249 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.jallcom.2018.06.357 | |||||
権利 | ||||||
権利情報 | © 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
著者版フラグ | ||||||
値 | author | |||||
出版者 | ||||||
出版者 | Elsevier |