{"created":"2021-03-01T07:29:48.435865+00:00","id":49592,"links":{},"metadata":{"_buckets":{"deposit":"45260fcb-4199-4ae7-a0a3-4129dbb0c2f8"},"_deposit":{"id":"49592","owners":[],"pid":{"revision_id":0,"type":"depid","value":"49592"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00049592","sets":["117:1717","117:494","3:62:5592:616"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-10","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"420","bibliographicPageStart":"417","bibliographicVolumeNumber":"766","bibliographic_titles":[{"bibliographic_title":"Journal of alloys and compounds"}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The grain size and hole mobility of polycrystalline Si1-xGex thin films formed on glass by solid-phase crystallization were significantly improved after preparing the amorphous precursors by heating the substrate. By just controlling the deposition temperature of the precursors (50–350 °C) for each SiGe composition, the grain size reached over 2 μm across the whole composition range. Reflecting the enlargement of the grain size, the hole mobility values were improved by approximately one order of magnitude. These values are comparable to those of single-crystal SiGe formed by Ge condensation and are the highest among SiGe on insulators synthesized at low temperature (<900 °C). The SiGe on insulator technology obtained in this study will greatly contribute to the development of SiGe-based electronic and optical devices.","subitem_description_type":"Abstract"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.jallcom.2018.06.357","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/"}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"09258388","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10817249","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"末益, 崇"},{"creatorName":"スエマス, タカシ","creatorNameLang":"ja-Kana"},{"creatorName":"SUEMASU, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"都甲, 薫"},{"creatorName":"トコウ, カオル","creatorNameLang":"ja-Kana"},{"creatorName":"TOKO, Kaoru","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Takahara, D.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoshimine, R.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-11-01"}],"displaytype":"detail","filename":"JAC_766.pdf","filesize":[{"value":"683.1 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"JAC_766","url":"https://tsukuba.repo.nii.ac.jp/record/49592/files/JAC_766.pdf"},"version_id":"ec56de80-9856-4a29-bcd9-382e2ff91700"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"High-hole mobility Si1-xGex (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"High-hole mobility Si1-xGex (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization"}]},"item_type_id":"5","owner":"1","path":["494","1717","616"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-04-11"},"publish_date":"2019-04-11","publish_status":"0","recid":"49592","relation_version_is_last":true,"title":["High-hole mobility Si1-xGex (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization"],"weko_creator_id":"1","weko_shared_id":5},"updated":"2022-04-27T09:22:09.864335+00:00"}