{"created":"2021-03-01T07:29:48.435865+00:00","id":49592,"links":{},"metadata":{"_buckets":{"deposit":"45260fcb-4199-4ae7-a0a3-4129dbb0c2f8"},"_deposit":{"created_by":290,"id":"49592","owners":[290],"pid":{"revision_id":0,"type":"depid","value":"49592"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00049592","sets":["3:62:1722555831928"]},"author_link":[],"item_1644910766877":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_1722561470159":{"attribute_name":"著者情報","attribute_value_mlt":[{"subitem_link_text":"数理物質系; 末益, 崇; スエマス, タカシ; SUEMASU, Takashi","subitem_link_url":"http://trios.tsukuba.ac.jp/researcher/0000000714"},{"subitem_link_text":"数理物質系; 都甲, 薫; トコウ, カオル; TOKO, Kaoru","subitem_link_url":"http://trios.tsukuba.ac.jp/researcher/0000003027"}]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-10","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"420","bibliographicPageStart":"417","bibliographicVolumeNumber":"766","bibliographic_titles":[{"bibliographic_title":"Journal of alloys and compounds","bibliographic_titleLang":"en"}]}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier","subitem_publisher_language":"en"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.jallcom.2018.06.357","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利情報","attribute_value_mlt":[{"subitem_rights":"© 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/","subitem_rights_language":"en"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0925-8388","subitem_source_identifier_type":"PISSN"}]},"item_5_source_id_9":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA10817249","subitem_source_identifier_type":"NCID"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"SUEMASU Takashi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"TOKO Kaoru","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Takahara D.","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Yoshimine R.","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-11-01"}],"displaytype":"detail","filename":"JAC_766.pdf","filesize":[{"value":"683.1 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://tsukuba.repo.nii.ac.jp/record/49592/files/JAC_766.pdf"},"version_id":"ec56de80-9856-4a29-bcd9-382e2ff91700"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"High-hole mobility Si1-xGex (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"High-hole mobility Si1-xGex (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization","subitem_title_language":"ja"}]},"item_type_id":"5","owner":"290","path":["1722555831928"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2019-04-11"},"publish_date":"2019-04-11","publish_status":"0","recid":"49592","relation_version_is_last":true,"title":["High-hole mobility Si1-xGex (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization"],"weko_creator_id":"290","weko_shared_id":-1},"updated":"2024-11-27T01:00:44.269282+00:00"}