{"created":"2021-03-01T06:44:07.952066+00:00","id":8680,"links":{},"metadata":{"_buckets":{"deposit":"f042f21f-f81f-4c79-9bd2-09e2380a9a50"},"_deposit":{"id":"8680","owners":[],"pid":{"revision_id":0,"type":"depid","value":"8680"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00008680","sets":["3:233:244"]},"author_link":["35625"],"item_12_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004","bibliographicIssueDateType":"Issued"}}]},"item_12_date_granted_46":{"attribute_name":"学位授与年月日","attribute_value_mlt":[{"subitem_dategranted":"2004-03-25"}]},"item_12_degree_grantor_44":{"attribute_name":"学位授与大学","attribute_value_mlt":[{"subitem_degreegrantor":[{"subitem_degreegrantor_language":"ja","subitem_degreegrantor_name":"筑波大学"},{"subitem_degreegrantor_language":"en","subitem_degreegrantor_name":"University of 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Engineering"}]},"item_12_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"近年，半導体であるC60固体にキャリアをドープする方法として電場効果ドーピングが注目されている。これは，C60を用いた電界効果トランジスタ(FET)構造を作成し,それにゲート電圧を印加することで絶縁膜に接したC60の表面にキャリアを誘起する手法である。電場効果ドーピングでは，原理的にはゲート電圧によってキャリア濃度を自由に変えられ，さらにはゲート電圧の極性を変えることで電子とホールを同様に導入することが可能である。また，他の電子や分子を導入する必要がないので結晶構造が大きく変化することはない。これまでに作成されたC60-FETで得られているキャリア濃度は，キャリアが単分子層にのみ存在すると仮定しても分子当たり0.01-0.04個程度と化学的ドーピングに比べて低い。化学的ドーピングによってC60に分子当たり3個の電子を導入した場合には，超伝導体となる。そのため，これと同程度のキャリア数を電場効果で導入した時のC60の電子状態は非常に興味深く，高キャリア濃度を実現するための試みがなされている。しかしながら，このようなキャリア数をドープした場合には非常に大きな外部電場がC60に加わるので，ポテンシャルの変調が避けられず，C60の表面付近の電子状態はバルクの電子状態とは大きく異なっていると考えられる。このため，その電子状態を議論するには，FET構造における電場効果を考慮した定量的な計算を行う必要がある。 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