@article{oai:tsukuba.repo.nii.ac.jp:00007448,
 author = {佐野, 伸行 and SANO, Nobuyuki and Tomizawa, Masaaki},
 issue = {14},
 journal = {Applied Physics Letters},
 month = {Oct},
 pages = {2267--2269},
 title = {Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors},
 volume = {79},
 year = {2001},
 yomi = {サノ, ノブユキ}
}