{"created":"2021-03-01T07:35:42.463526+00:00","id":54834,"links":{},"metadata":{"_buckets":{"deposit":"e980038d-89d3-48b0-a6de-7f6b4d7c78c8"},"_deposit":{"created_by":290,"id":"54834","owners":[290],"pid":{"revision_id":0,"type":"depid","value":"54834"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00054834","sets":["3:62:1722555831928"]},"author_link":[],"item_1644910766877":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_1722561470159":{"attribute_name":"著者情報","attribute_value_mlt":[{"subitem_link_text":"数理物質系; 梅田, 享英; ウメダ, タカヒデ; UMEDA, Takahide","subitem_link_url":"http://trios.tsukuba.ac.jp/researcher/0000000702"}]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"15","bibliographicPageStart":"151602","bibliographicVolumeNumber":"115","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters","bibliographic_titleLang":"en"}]}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing","subitem_publisher_language":"en"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.5116170","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利情報","attribute_value_mlt":[{"subitem_rights":"© 2019 Author(s).","subitem_rights_language":"en"},{"subitem_rights":"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 115 151602 (2019) and may be found at https://doi.org/10.1063/1.5116170. ","subitem_rights_language":"en"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_5_source_id_9":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"UMEDA Takahide","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"0000000702"}]},{"creatorNames":[{"creatorName":"Kagoyama Y.","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Tomita K.","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Abe Y.","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Sometani M.","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Okamoto M.","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Harada S.","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"Hatakeyama T.","creatorNameLang":"en"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-11-01"}],"displaytype":"detail","filename":"APL_115-15.pdf","filesize":[{"value":"1.7 MB"}],"format":"application/pdf","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://tsukuba.repo.nii.ac.jp/record/54834/files/APL_115-15.pdf"},"version_id":"232b205e-ca23-4590-881d-48cffaeb35c6"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000    1 ¯)/SiO2 interfaces with wet oxidation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000    1 ¯)/SiO2 interfaces with wet oxidation","subitem_title_language":"en"}]},"item_type_id":"5","owner":"290","path":["1722555831928"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2020-06-29"},"publish_date":"2020-06-29","publish_status":"0","recid":"54834","relation_version_is_last":true,"title":["Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000    1 ¯)/SiO2 interfaces with wet oxidation"],"weko_creator_id":"290","weko_shared_id":-1},"updated":"2024-11-25T06:45:13.994515+00:00"}