@article{oai:tsukuba.repo.nii.ac.jp:00054826,
 author = {藤岡, 淳 and FUJIOKA, Jun and Masuko, M. and Nakamura, M. and Kawasaki, M. and Tokura, Y.},
 issue = {8},
 journal = {APL Materials},
 month = {Aug},
 note = {We have investigated the charge transport in thin films of correlated Dirac semimetal of perovskite CaIrO3 by measurements of resistivity and optical spectra. The semimetallic transport of either electron-type or hole-type carrier is observed in the strain-relaxed thin films. By controlling the strain relaxation via thermal annealing, the carrier density decreases in both n-type and p-type samples, while enhancing the carrier mobility up to 160 cm2 V−1 s−1 at an electron density of 2.5 × 1018 cm−3 at 2 K. We propose that the energy of Dirac line node, which locates in proximity to the Fermi level, varies with the lattice distortion or strain-sensitive defect character, causing the sign change in the charge carrier as well as the mobility enhancement.},
 title = {Strain-engineering of charge transport in the correlated Dirac semimetal of perovskite CaIrO3 thin films},
 volume = {7},
 year = {2019},
 yomi = {フジオカ, ジュン}
}