{"created":"2021-03-01T07:34:54.136960+00:00","id":54118,"links":{},"metadata":{"_buckets":{"deposit":"db73a527-047a-4c03-9095-402263e599aa"},"_deposit":{"id":"54118","owners":[],"pid":{"revision_id":0,"type":"depid","value":"54118"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00054118","sets":["117:1717","117:494","3:62:5592:7802"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageStart":"075005","bibliographicVolumeNumber":"3","bibliographic_titles":[{},{"bibliographic_title":"Journal of Physics Communications","bibliographic_titleLang":"en"}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Photoluminescence (PL) measurements were carried out on 0.5-μm thick BaSi2 epitaxial films grown on Si(111) substrates with various Ba-to-Si deposition rate ratios (R Ba/R Si) in the range of 1.7–5.1. The samples were excited from both the frontside (BaSi2) and the backside (Si substrate), at temperatures in the range of 8–50 K. These measurements have highlighted the existence of localized states within the bandgap that result from defects in the BaSi2 films. The PL intensity is highly dependent on the excitation power, temperature, and R Ba/R Si. Of those studied, the BaSi2 film at R Ba/R Si = 4.0 showed the most intense PL and weak photoresponsivity, whereas the PL intensity was weaker for the other samples. Therefore, we chose this sample for a detailed PL investigation. Based on the results we determined the energy separation between localized states, corresponding to PL peak energies. The difference in PL spectra excited from the BaSi2-side and Si-side is attributed to the difference in kinds of defects emitting PL. The photoresponsivity of the BaSi2 was drastically enhanced by atomic hydrogen passivation, and the PL intensity of the sample decreased accordingly.","subitem_description_type":"Abstract"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1088/2399-6528/ab2fa1","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Original content from thiswork may be used underthe terms of theCreativeCommons Attribution 3.0licence."},{"subitem_rights":"Any further distribution ofthis work must maintainattribution to theauthor(s)and the title ofthe work, journal citationand DOI."}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2399-6528","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"都甲, 薫"},{"creatorName":"トコウ, カオル","creatorNameLang":"ja-Kana"},{"creatorName":"TOKO, Kaoru","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"末益, 崇"},{"creatorName":"スエマス, タカシ","creatorNameLang":"ja-Kana"},{"creatorName":"SUEMASU, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Benincasa, Louise","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hoshida, Hirofumi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Deng, Tianguo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sato, Takuma","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Xu, Zhihao","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Terai, Yoshikazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-02-06"}],"displaytype":"detail","filename":"JPC_3-7-075005.pdf","filesize":[{"value":"1.1 MB"}],"format":"application/pdf","licensetype":"license_6","mimetype":"application/pdf","url":{"label":"JPC_3-7-075005","url":"https://tsukuba.repo.nii.ac.jp/record/54118/files/JPC_3-7-075005.pdf"},"version_id":"5b02ba3d-448d-4ca9-b332-ed879699b943"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation","subitem_title_language":"en"}]},"item_type_id":"5","owner":"1","path":["494","1717","7802"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-02-06"},"publish_date":"2020-02-06","publish_status":"0","recid":"54118","relation_version_is_last":true,"title":["Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation"],"weko_creator_id":"1","weko_shared_id":5},"updated":"2022-04-27T09:28:19.564655+00:00"}