{"created":"2021-03-01T07:32:53.312372+00:00","id":52334,"links":{},"metadata":{"_buckets":{"deposit":"557ac053-5e37-4749-8afa-999f722b7b46"},"_deposit":{"id":"52334","owners":[],"pid":{"revision_id":0,"type":"depid","value":"52334"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00052334","sets":["3048:2843","3:62:5298:7516"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-06","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"62","bibliographicVolumeNumber":"2","bibliographic_titles":[{"bibliographic_title":"Communications Physics"}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Silicon is an indispensable material in electric device technology. However, Si is an indirect bandgap material; therefore, its excitation efficiency, which requires phonon assistance, is low under propagating far-field light. To improve the excitation efficiency, herein we performed optical near-field excitation, which is confined in a nano-scale, where the interband transitions between different wave numbers are excited according to the uncertainty principle; thus, optical near-field can directly excite the carrier in the indirect bandgap. To evaluate the effect of optical near-field confined in a nano-scale, we fabricate the lateral Si p-n junction with Au nanoparticles as sources to generate the field confinement. We observed a 47.0% increase in the photo-sensitivity rate. In addition, by using the thin lateral p-n junction, which eliminates the far-field excitation, we confirmed a 42.3% increase in the photo-sensitivity rate.","subitem_description_type":"Abstract"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Nature"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1038/s42005-019-0173-1","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© The Author(s) 2019"},{"subitem_rights":"This article is licensed under a Creative CommonsAttribution 4.0 International License, which permits use, sharing,adaptation, distribution and reproduction in any medium or format, as long as you giveappropriate credit to the original author(s) and the source, provide a link to the CreativeCommons license, and indicate if changes were made. The images or other third partymaterial in this article are included in the article’s Creative Commons license, unlessindicated otherwise in a credit line to the material. If material is not included in thearticle’s Creative Commons license and your intended use is not permitted by statutoryregulation or exceeds the permitted use, you will need to obtain permission directly fromthe copyright holder. To view a copy of this license, visithttp://creativecommons.org/licenses/by/4.0/."}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2399-3650","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"矢花, 一浩"},{"creatorName":"ヤバナ, カズヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"YABANA, Kazuhiro","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Yatsui, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Okada, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takemori, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sato, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Saichi, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogamoto, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Chiashi, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Maruyama, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Noda, M.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iida, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nobusada, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-09-30"}],"displaytype":"detail","filename":"CP_2-62.pdf","filesize":[{"value":"1.4 MB"}],"format":"application/pdf","licensetype":"license_6","mimetype":"application/pdf","url":{"label":"CP_2-62","url":"https://tsukuba.repo.nii.ac.jp/record/52334/files/CP_2-62.pdf"},"version_id":"e163ed9b-ec9e-440a-9c4a-893562f21681"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation"}]},"item_type_id":"5","owner":"1","path":["2843","7516"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-09-30"},"publish_date":"2019-09-30","publish_status":"0","recid":"52334","relation_version_is_last":true,"title":["Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation"],"weko_creator_id":"1","weko_shared_id":5},"updated":"2022-04-27T09:25:49.036205+00:00"}