@article{oai:tsukuba.repo.nii.ac.jp:00052334,
 author = {矢花, 一浩 and YABANA, Kazuhiro and Yatsui, T. and Okada, S. and Takemori, T. and Sato, T. and Saichi, K. and Ogamoto, T. and Chiashi, S. and Maruyama, S. and Noda, M. and Iida, K. and Nobusada, K.},
 journal = {Communications Physics},
 month = {Jun},
 note = {Silicon is an indispensable material in electric device technology. However, Si is an indirect bandgap material; therefore, its excitation efficiency, which requires phonon assistance, is low under propagating far-field light. To improve the excitation efficiency, herein we performed optical near-field excitation, which is confined in a nano-scale, where the interband transitions between different wave numbers are excited according to the uncertainty principle; thus, optical near-field can directly excite the carrier in the indirect bandgap. To evaluate the effect of optical near-field confined in a nano-scale, we fabricate the lateral Si p-n junction with Au nanoparticles as sources to generate the field confinement. We observed a 47.0% increase in the photo-sensitivity rate. In addition, by using the thin lateral p-n junction, which eliminates the far-field excitation, we confirmed a 42.3% increase in the photo-sensitivity rate.},
 title = {Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation},
 volume = {2},
 year = {2019},
 yomi = {ヤバナ, カズヒロ}
}