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Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors
http://hdl.handle.net/2241/00153602
http://hdl.handle.net/2241/00153602dce5fcb8-702c-4f96-8b27-8314f9fbcc13
名前 / ファイル | ライセンス | アクション |
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APL_112-3.pdf (1.7 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2018-10-24 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
Abe, Y.
× Abe, Y.× 梅田, 享英× Okamoto, M.× Kosugi, R.× Harada, S.× Haruyama, M.× Kada, W.× Hanaizumi, O.× Onoda, S.× Ohshima, T. |
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書誌情報 |
en : Applied Physics Letters 巻 112, 号 3, p. 031105, 発行日 2018-01 |
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ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0003-6951 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.4994241 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | The following article appeared in Appl. Phys. Lett. 112, 031105 (2018) and may be found at https://doi.org/10.1063/1.4994241 | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | AIP Publishing |