{"created":"2021-03-01T07:27:58.651055+00:00","id":47922,"links":{},"metadata":{"_buckets":{"deposit":"6089d160-615e-4420-8470-038979d75386"},"_deposit":{"id":"47922","owners":[],"pid":{"revision_id":0,"type":"depid","value":"47922"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00047922","sets":["117:3067","117:3068","3:62:5592:1095"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageStart":"02C110","bibliographicVolumeNumber":"36","bibliographic_titles":[{"bibliographic_title":"Journal of vacuum science & technology B"}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The electron emission properties of planar-type electron emission devices based on a graphene-oxide-semiconductor (GOS) structure before and after vacuum annealing were investigated. The fluctuation of the electron emission current was around 0.07%, which is excellent stability compared to the conventional field emitter array. The GOS devices were operable in very low vacuum of 10 Pa without any deterioration of their electron emission properties. Improvement of the electron emission properties of the GOS devices was achieved by vacuum annealing at 300 °C. The electron emission efficiency of the GOS type electron emission devices reached 2.7% from 0.2% after vacuum annealing. The work function of the graphene electrode was found to decrease 0.26 eV after vacuum annealing by Kelvin force probe microscopy analysis. These results indicated that the improvement of the electron emission efficiency of the GOS devices by vacuum annealing is due to the decrease in the work function of the graphene electrode.","subitem_description_type":"Abstract"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Vacuum Society"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1116/1.5006866","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Published by the AVS. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Vac. Sci. Technol. B 36, 02C110 (2018) and may be found at http://dx.doi.org/10.1116/1.5006866. "}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2166-2746","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA10804928","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Murakami, Katsuhisa"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tanaka, Shunsuke"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Iijima, Takuya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nagao, Masayoshi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nemoto, Yoshihiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takeguchi, Masaki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamada, Yoichi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"佐々木, 正洋"},{"creatorName":"ササキ, マサヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"SASAKI, Masahiro","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"YAMADA, Yoichi","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-09-27"}],"displaytype":"detail","filename":"JVSTB_36-2.pdf","filesize":[{"value":"1.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JVSTB_36-2","url":"https://tsukuba.repo.nii.ac.jp/record/47922/files/JVSTB_36-2.pdf"},"version_id":"8b7556ee-5d54-4b6b-95e8-00cf8f44aad2"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices"}]},"item_type_id":"5","owner":"1","path":["3068","3067","1095"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-09-27"},"publish_date":"2018-09-27","publish_status":"0","recid":"47922","relation_version_is_last":true,"title":["Electron emission properties of graphene-oxide-semiconductor planar-type electron emission devices"],"weko_creator_id":"1","weko_shared_id":5},"updated":"2022-04-27T09:18:01.644317+00:00"}