{"created":"2021-03-01T07:25:26.543658+00:00","id":45612,"links":{},"metadata":{"_buckets":{"deposit":"8fb8c0a4-1d1e-4939-a3d4-b25208edc07a"},"_deposit":{"id":"45612","owners":[],"pid":{"revision_id":0,"type":"depid","value":"45612"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00045612","sets":["117:1717","117:494","3:62:5596:2060"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-01","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"22","bibliographicVolumeNumber":"13","bibliographic_titles":[{"bibliographic_title":"Nanoscale Research Letters"}]}]},"item_5_creator_3":{"attribute_name":"著者別名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"都甲, 薫"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"末益, 崇"}],"nameIdentifiers":[{},{},{}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300−700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.","subitem_description_type":"Abstract"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Springer"}]},"item_5_relation_10":{"attribute_name":"PubMed番号","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"29340830","subitem_relation_type_select":"PMID"}}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1186/s11671-018-2437-1","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© The Author(s). 2018 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made."}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1931-7573","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Imajo, T."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Toko, K."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Takabe, R."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Saitoh, N."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yoshizawa, N."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Suemasu, T."}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-03-12"}],"displaytype":"detail","filename":"NRL_13-22.pdf","filesize":[{"value":"3.3 MB"}],"format":"application/pdf","licensetype":"license_6","mimetype":"application/pdf","url":{"label":"NRL_13-22","url":"https://tsukuba.repo.nii.ac.jp/record/45612/files/NRL_13-22.pdf"},"version_id":"18b38073-06ad-4bd1-bfd0-7aff7f9a7a77"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates"}]},"item_type_id":"5","owner":"1","path":["494","1717","2060"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-12"},"publish_date":"2018-03-12","publish_status":"0","recid":"45612","relation_version_is_last":true,"title":["Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates"],"weko_creator_id":"1","weko_shared_id":5},"updated":"2022-04-27T09:17:14.746657+00:00"}