@article{oai:tsukuba.repo.nii.ac.jp:00045612,
 author = {都甲, 薫 and 末益, 崇 and Imajo, T. and Toko, K. and Takabe, R. and Saitoh, N. and Yoshizawa, N. and Suemasu, T.},
 journal = {Nanoscale Research Letters},
 month = {Jan},
 note = {Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300−700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.},
 title = {Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates},
 volume = {13},
 year = {2018}
}