{"created":"2021-03-01T07:20:34.722058+00:00","id":41133,"links":{},"metadata":{"_buckets":{"deposit":"9962af70-e364-4899-b10d-8995a680b562"},"_deposit":{"id":"41133","owners":[],"pid":{"revision_id":0,"type":"depid","value":"41133"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00041133","sets":["117:5349","117:5893","3:62:5296:4865"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-01-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"133","bibliographicPageStart":"123","bibliographicVolumeNumber":"2017","bibliographic_titles":[{"bibliographic_title":"Applied Physics A: Materials Science & Processing"}]}]},"item_5_creator_3":{"attribute_name":"著者別名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"岡本, 大"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"矢野, 裕司"}],"nameIdentifiers":[{},{},{}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The reason for the effective removal of interface traps in SiO2/4H-SiC (0001) structures by boron (B) incorporation was investigated by employing low-temperature electrical measurements. Low-temperature capacitance–voltage and thermal dielectric relaxation current measurements revealed that the density of electrons captured in slow interface traps in B-incorporated oxide is lower than that in dry and NO-annealed oxides. These results suggest that near-interface traps can be removed by B incorporation, which is considered to be an important reason for the increase in the field-effect mobility of 4H-SiC metal–oxide–semiconductor devices. A model for the passivation mechanism is proposed that takes account of stress relaxation during thermal oxidation.","subitem_description_type":"Abstract"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Springer Verlag"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1007/s00339-016-0724-1","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"The final publication is available at Springer via http://dx.doi.org/10.1007/s00339-016-0724-1."}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0947-8396","subitem_source_identifier_type":"ISSN"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"OKAMOTO, Dai"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"SOMETANI, Mitsuru"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"HARADA, Shinsuke"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"KOSUGI, Ryoji"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"YONEZAWA, Yoshiyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"YANO, Hiroshi"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-01-30"}],"displaytype":"detail","filename":"20170510_okamoto.pdf","filesize":[{"value":"214.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures","url":"https://tsukuba.repo.nii.ac.jp/record/41133/files/20170510_okamoto.pdf"},"version_id":"dbe122ff-44c1-4116-90e3-e5cea8dc76f2"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"SiC","subitem_subject_scheme":"Other"},{"subitem_subject":"MOS interface","subitem_subject_scheme":"Other"},{"subitem_subject":"Near interface traps","subitem_subject_scheme":"Other"},{"subitem_subject":"Boron diffusion","subitem_subject_scheme":"Other"},{"subitem_subject":"Thermal dielectric relaxation current","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures"}]},"item_type_id":"5","owner":"1","path":["5893","5349","4865"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-05-12"},"publish_date":"2017-05-12","publish_status":"0","recid":"41133","relation_version_is_last":true,"title":["Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures"],"weko_creator_id":"1","weko_shared_id":5},"updated":"2022-04-27T09:11:56.125663+00:00"}