@article{oai:tsukuba.repo.nii.ac.jp:00041133, author = {岡本, 大 and 矢野, 裕司 and OKAMOTO, Dai and SOMETANI, Mitsuru and HARADA, Shinsuke and KOSUGI, Ryoji and YONEZAWA, Yoshiyuki and YANO, Hiroshi}, journal = {Applied Physics A: Materials Science & Processing}, month = {Jan}, note = {The reason for the effective removal of interface traps in SiO2/4H-SiC (0001) structures by boron (B) incorporation was investigated by employing low-temperature electrical measurements. Low-temperature capacitance–voltage and thermal dielectric relaxation current measurements revealed that the density of electrons captured in slow interface traps in B-incorporated oxide is lower than that in dry and NO-annealed oxides. These results suggest that near-interface traps can be removed by B incorporation, which is considered to be an important reason for the increase in the field-effect mobility of 4H-SiC metal–oxide–semiconductor devices. A model for the passivation mechanism is proposed that takes account of stress relaxation during thermal oxidation.}, pages = {123--133}, title = {Effect of Boron Incorporation on Slow Interface Traps in SiO2/4H-SiC Structures}, volume = {2017}, year = {2017} }