@article{oai:tsukuba.repo.nii.ac.jp:00039972,
 author = {An, Junjie and Namai, Masaki and 岩室, 憲幸 and IWAMURO, Noriyuki},
 issue = {12},
 journal = {Japanese Journal of Applied Physics},
 month = {Dec},
 title = {Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation},
 volume = {55},
 year = {2016},
 yomi = {イワムロ, ノリユキ}
}