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Influence of defects on the electronic structures of bilayer graphene
http://hdl.handle.net/2241/00135608
http://hdl.handle.net/2241/00135608c696e4a2-86c2-4fd6-a49b-d76dfd09b200
名前 / ファイル | ライセンス | アクション |
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SS_644 (3.2 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2016-02-24 | |||||
タイトル | ||||||
タイトル | Influence of defects on the electronic structures of bilayer graphene | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Kishimoto, Ken
× Kishimoto, Ken× Okada, Susumu |
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著者別名 |
岡田, 晋
× 岡田, 晋 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Based on first-principles total-energy calculation, we investigate the electronic structures of bilayer graphene, one of which layers possesses atomic or topological defects, to explore the possibility of band gap engineering of graphene by means of physisorption of defective graphene. Our calculations show that the pristine graphene layer possesses a finite energy gap between bonding and antibonding π states because of the potential undulation caused by the other graphene layers with defects. We also found that the gap values strongly depend on the defect species and their mutual arrangement with respect to the pristine layer. | |||||
書誌情報 |
Surface science 巻 644, p. 18-23, 発行日 2016-02 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0039-6028 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00853803 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.susc.2015.08.036 | |||||
権利 | ||||||
権利情報 | © 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
著者版フラグ | ||||||
値 | author | |||||
出版者 | ||||||
出版者 | Elsevier B.V. |