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Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films
http://hdl.handle.net/2241/00134942
59213529-424b-4470-8a9e-0527de60655e
名前 / ファイル | ライセンス | Actions | |
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item type | Journal Article(1) | |||||
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公開日 | 2016-02-04 | |||||
タイトル | ||||||
タイトル | Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
タイプ | journal article | |||||
著者 |
Takahashi, Jumpei
× Takahashi, Jumpei× Hirose, Yasushi× Oka, Daichi× Nakao, Shoichiro× Yang, Chang× Fukumura, Tomoteru× Harayama, Isao× Sekiba, Daiichiro× Hasegawa, Tetsuya |
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著者別名 |
関場, 大一郎
× 関場, 大一郎 |
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抄録 | ||||||
内容記述 | Synthesis of mid- to late-transition metal oxynitrides is generally difficult by conventional thermal ammonolysis because of thermal instability. In this letter, we synthesized epitaxialthin films of AX-type phase-pure cobalt oxynitrides (CoOxNy) by using nitrogen-plasma-assisted pulsed laser deposition and investigated their structural, electrical, and magnetic properties. The CoOxNythin films with 0 ≤ y/(x + y) ≤ 0.63 grown on MgO (100) substrates showed a structuralphase transition from rock salt (RS) to zinc blend at the nitrogen content y/(x + y) ∼ 0.5. As the nitrogen content increased, the room-temperature electrical resistivity of the CoOxNythin films monotonically decreased from the order of 105 Ω cm to 10−4 Ω cm. Furthermore, we observed an insulator-to-metal transition at y/(x + y) ∼ 0.34 in the RS-CoOxNy phase, which has not yet been reported in Co2+/Co3+ mixed-valence cobalt oxides with octahedral coordination. The low resistivity in the RS-CoOxNy phase, on the 10−3 Ω cm order, may have originated from the intermediate spin state of Co3+ stabilized by the lowered crystal field symmetry of the CoO6−nNn octahedra (n = 1, 2,…5). Magnetization measurements suggested that a magnetic phase transition occurred in the RS-CoOxNyfilms during the insulator-to-metal transition. These results demonstrate that low-temperature epitaxialgrowth is a promising approach for exploring novel electronic functionalities in oxynitrides. | |||||
書誌情報 |
Applied physics letters 巻 107, 号 23, p. 231906, 発行日 2015-12 |
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ISSN | ||||||
収録物識別子 | 0003-6951 | |||||
書誌レコードID | ||||||
収録物識別子 | AA00543431 | |||||
DOI | ||||||
関連識別子 | ||||||
関連識別子 | 10.1063/1.4937431 | |||||
権利 | ||||||
権利情報 | © 2015 AIP Publishing LLC. | |||||
権利 | ||||||
権利情報 | This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 107, 231906 (2015) and may be found at http://dx.doi.org/10.1063/1.4937431. | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
出版者 | Applied physics letters |