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{"_buckets": {"deposit": "5c1999ca-f7de-4a94-8db2-9fac8e1579a3"}, "_deposit": {"id": "32478", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "32478"}, "status": "published"}, "_oai": {"id": "oai:tsukuba.repo.nii.ac.jp:00032478", "sets": ["2956", "2955"]}, "item_5_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2015-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "5", "bibliographicPageEnd": "2480", "bibliographicPageStart": "2474", "bibliographicVolumeNumber": "30", "bibliographic_titles": [{"bibliographic_title": "IEEE transactions on power electronics"}]}]}, "item_5_creator_3": {"attribute_name": "著者別名", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "只野, 博"}], "nameIdentifiers": [{"nameIdentifier": "110601", "nameIdentifierScheme": "WEKO"}]}]}, "item_5_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Annular microvoids formed by neutron-induced single-event burnout (SEB) in Si power diodes were observed by a slice-and-view technique. The axial symmetry of damage region reflects the spatially isotropic thermal diffusion that occurred. Analytical formulas for the local rise in temperature during SEB were derived from the thermal diffusion equation. The local temperature was found to increase in direct proportion to the deposited energy, which was expressed as the time integration of the product of the applied voltage and the SEB current. This current is the result of charges generated by recoil ions and subsequent current-induced avalanche. The diameter of the damage region was estimated using the analytical formulas and the energy associated with Joule heating, which was calculated by technology computer-aided design device simulations, and was found to be comparable in size to the observed annular voids. The SEB current density was also calculated based on the simulated SEB current and the size of the damage region.", "subitem_description_type": "Abstract"}]}, "item_5_publisher_27": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Institute of Electrical and Electronics Engineers"}]}, "item_5_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1109/TPEL.2014.2361682", "subitem_relation_type_select": "DOI"}}]}, "item_5_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."}]}, "item_5_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_5_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0885-8993", "subitem_source_identifier_type": "ISSN"}]}, "item_5_source_id_9": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA10670151", "subitem_source_identifier_type": "NCID"}]}, "item_5_subject_20": {"attribute_name": "NIIサブジェクト", "attribute_value_mlt": [{"subitem_subject": "電気電子工学", "subitem_subject_scheme": "Other"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Shoji, T."}], "nameIdentifiers": [{"nameIdentifier": "110597", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nishida, S."}], "nameIdentifiers": [{"nameIdentifier": "110598", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hamada, K."}], "nameIdentifiers": [{"nameIdentifier": "110599", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tadano, H."}], "nameIdentifiers": [{"nameIdentifier": "110600", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2015-05-01"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "IEEEPE_30-5.pdf", "filesize": [{"value": "3.7 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 3700000.0, "url": {"label": "IEEEPE_30-5", "url": "https://tsukuba.repo.nii.ac.jp/record/32478/files/IEEEPE_30-5.pdf"}, "version_id": "00234ad4-26fb-46bf-9b11-ccade531ae00"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Observation and Analysis of Neutron-Induced Single-Event Burnout in Silicon Power Diodes", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Observation and Analysis of Neutron-Induced Single-Event Burnout in Silicon Power Diodes"}]}, "item_type_id": "5", "owner": "1", "path": ["2956", "2955"], "permalink_uri": "http://hdl.handle.net/2241/00123346", "pubdate": {"attribute_name": "公開日", "attribute_value": "2015-02-20"}, "publish_date": "2015-02-20", "publish_status": "0", "recid": "32478", "relation": {}, "relation_version_is_last": true, "title": ["Observation and Analysis of Neutron-Induced Single-Event Burnout in Silicon Power Diodes"], "weko_shared_id": 5}
Observation and Analysis of Neutron-Induced Single-Event Burnout in Silicon Power Diodes
http://hdl.handle.net/2241/00123346
http://hdl.handle.net/2241/00123346464ba33f-aa3a-4560-85e3-03ce3635140a
名前 / ファイル | ライセンス | アクション |
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IEEEPE_30-5 (3.7 MB)
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Item type | Journal Article(1) | |||||
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公開日 | 2015-02-20 | |||||
タイトル | ||||||
タイトル | Observation and Analysis of Neutron-Induced Single-Event Burnout in Silicon Power Diodes | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Shoji, T.
× Shoji, T.× Nishida, S.× Hamada, K.× Tadano, H. |
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著者別名 |
只野, 博
× 只野, 博 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Annular microvoids formed by neutron-induced single-event burnout (SEB) in Si power diodes were observed by a slice-and-view technique. The axial symmetry of damage region reflects the spatially isotropic thermal diffusion that occurred. Analytical formulas for the local rise in temperature during SEB were derived from the thermal diffusion equation. The local temperature was found to increase in direct proportion to the deposited energy, which was expressed as the time integration of the product of the applied voltage and the SEB current. This current is the result of charges generated by recoil ions and subsequent current-induced avalanche. The diameter of the damage region was estimated using the analytical formulas and the energy associated with Joule heating, which was calculated by technology computer-aided design device simulations, and was found to be comparable in size to the observed annular voids. The SEB current density was also calculated based on the simulated SEB current and the size of the damage region. | |||||
書誌情報 |
IEEE transactions on power electronics 巻 30, 号 5, p. 2474-2480, 発行日 2015-05 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0885-8993 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10670151 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1109/TPEL.2014.2361682 | |||||
権利 | ||||||
権利情報 | © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||
著者版フラグ | ||||||
値 | author | |||||
出版者 | ||||||
出版者 | Institute of Electrical and Electronics Engineers |