{"created":"2021-03-01T07:07:59.799103+00:00","id":29502,"links":{},"metadata":{"_buckets":{"deposit":"4aec77ab-caad-4f0c-9ae0-0f2e8c823ad0"},"_deposit":{"id":"29502","owners":[],"pid":{"revision_id":0,"type":"depid","value":"29502"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00029502","sets":["117:2585","3:62:5595:1637"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"1874","bibliographicPageStart":"1868","bibliographicVolumeNumber":"53","bibliographic_titles":[{"bibliographic_title":"Microelectronics and reliability"}]}]},"item_5_creator_3":{"attribute_name":"著者別名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山部, 紀久夫"}],"nameIdentifiers":[{}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"This paper discusses time-dependent dielectric breakdown (TDDB) in n-FETs with HfSiON gate stacks under various stress conditions. It was found that the slope of Weibull distribution of Tbd, Weibull β, changes with stress conditions, namely, DC stress, unipolar AC stress and bipolar AC stresses. On the other hand, the time evolution component of stress-induced leakage current (SILC) was not changed by these stresses. These experimental results indicate that the modulation of electron trapping/de-trapping and hole trapping/de-trapping by stress condition changes the defect size in high-k gate dielectrics. Therefore, the control of injected carrier and the characteristics of trapping can provide the steep Weibull distribution of Tbd, leading to long-term reliability in scaled CMOS devices with high-k gate stacks.","subitem_description_type":"Abstract"}]},"item_5_identifier_34":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2241/120788"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier Ltd"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.microrel.2013.05.010","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2013 Elsevier Ltd. “NOTICE: this is the author’s version of a work that was accepted for publication in Microelectronics Reliability. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Microelectronics Reliability ,53,12,2013, http://dx.doi.org/10.1016/j.microrel.2013.05.010."}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0026-2714","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00738419","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hirano, Izumi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakasaki, Yasushi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fukatsu, Shigeto"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Goto, Masakazu"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nagatomo, Koji"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Inumiya, Seiji"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sekine, Katsuyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mitani, Yuichiro"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamabe, Kikuo"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2014-05-09"}],"displaytype":"detail","filename":"MR_53-12.pdf","filesize":[{"value":"440.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"MR_53-12.pdf","url":"https://tsukuba.repo.nii.ac.jp/record/29502/files/MR_53-12.pdf"},"version_id":"5158d202-8fe1-4c6a-8fa6-b74e99bb74a6"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing"}]},"item_type_id":"5","owner":"1","path":["2585","1637"],"pubdate":{"attribute_name":"公開日","attribute_value":"2014-02-13"},"publish_date":"2014-02-13","publish_status":"0","recid":"29502","relation_version_is_last":true,"title":["Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2023-07-12T23:46:48.392768+00:00"}