@article{oai:tsukuba.repo.nii.ac.jp:00029502,
 author = {山部, 紀久夫 and Hirano, Izumi and Nakasaki, Yasushi and Fukatsu, Shigeto and Goto, Masakazu and Nagatomo, Koji and Inumiya, Seiji and Sekine, Katsuyuki and Mitani, Yuichiro and Yamabe, Kikuo},
 issue = {12},
 journal = {Microelectronics and reliability},
 month = {Dec},
 note = {This paper discusses time-dependent dielectric breakdown (TDDB) in n-FETs with HfSiON gate stacks under various stress conditions. It was found that the slope of Weibull distribution of Tbd, Weibull β, changes with stress conditions, namely, DC stress, unipolar AC stress and bipolar AC stresses. On the other hand, the time evolution component of stress-induced leakage current (SILC) was not changed by these stresses. These experimental results indicate that the modulation of electron trapping/de-trapping and hole trapping/de-trapping by stress condition changes the defect size in high-k gate dielectrics. Therefore, the control of injected carrier and the characteristics of trapping can provide the steep Weibull distribution of Tbd, leading to long-term reliability in scaled CMOS devices with high-k gate stacks.},
 pages = {1868--1874},
 title = {Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing},
 volume = {53},
 year = {2013}
}