{"created":"2021-03-01T07:07:59.668100+00:00","id":29500,"links":{},"metadata":{"_buckets":{"deposit":"92dda220-728a-4726-a9f9-536174e39d2b"},"_deposit":{"id":"29500","owners":[],"pid":{"revision_id":0,"type":"depid","value":"29500"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:00029500","sets":["117:1710","117:1711","3:62:5591:71"]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2014-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"5","bibliographicPageStart":"3","bibliographicVolumeNumber":"35","bibliographic_titles":[{"bibliographic_title":"IEEE Electron Device Letters"}]}]},"item_5_creator_3":{"attribute_name":"著者別名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"山田, 啓作"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大毛利, 健治"}],"nameIdentifiers":[{}]}]},"item_5_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (Vg) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic Vg by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.","subitem_description_type":"Abstract"}]},"item_5_identifier_34":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2241/120748"}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Institute of Electrical and Electronics Engineers"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1109/LED.2013.2288981","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2014 IEEE.Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works."}]},"item_5_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0741-3106","subitem_source_identifier_type":"ISSN"}]},"item_5_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00231428","subitem_source_identifier_type":"NCID"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Wei, Feng"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Chun, Meng Dou"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Niwa, M."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamada, K."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ohmori, K."}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2014-05-09"}],"displaytype":"detail","filename":"EDL_35－1.pdf","filesize":[{"value":"316.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"EDL_35－1.pdf","url":"https://tsukuba.repo.nii.ac.jp/record/29500/files/EDL_35－1.pdf"},"version_id":"ade5061b-90bb-43ca-b83f-3affa838b1b4"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias"}]},"item_type_id":"5","owner":"1","path":["1710","1711","71"],"pubdate":{"attribute_name":"公開日","attribute_value":"2014-02-10"},"publish_date":"2014-02-10","publish_status":"0","recid":"29500","relation_version_is_last":true,"title":["Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2022-04-27T08:58:01.917447+00:00"}