@article{oai:tsukuba.repo.nii.ac.jp:00024651,
 author = {Sato, Soshi and Kakushima, Kuniyuki and Ahmet, Parhat and 大毛利, 健治 and OHMORI, Kenji and Natori, Kenji and 山田, 啓作 and YAMADA, Keisaku and Iwai, Hiroshi},
 issue = {5},
 journal = {Microelectronics and reliability},
 month = {May},
 pages = {879--884},
 title = {Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors},
 volume = {51},
 year = {2011},
 yomi = {オオモリ, ケンジ and ヤマダ, ケイサク}
}