{"created":"2021-11-05T01:03:58.253906+00:00","id":2001792,"links":{},"metadata":{"_buckets":{"deposit":"3a46ec6f-9b7d-4730-b0dd-e811b9d6efba"},"_deposit":{"created_by":188,"id":"2001792","owner":"14","owners":[188],"owners_ext":{"displayname":"大久保光枝","username":"mokubo"},"pid":{"revision_id":0,"type":"depid","value":"2001792"},"status":"published"},"_oai":{"id":"oai:tsukuba.repo.nii.ac.jp:02001792","sets":["117:5135","3:62:5592:615"]},"author_link":["133158"],"item_1644910766877":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_5_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageStart":"075503","bibliographicVolumeNumber":"59","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_5_publisher_27":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing","subitem_publisher_language":"en"},{"subitem_publisher":"The Japan Society of Applied Physics","subitem_publisher_language":"en"}]},"item_5_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.35848/1347-4065/ab9a8b","subitem_relation_type_select":"DOI"}}]},"item_5_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2020 The Japan Society of Applied Physics","subitem_rights_language":"en"},{"subitem_rights":"This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ab9a8b","subitem_rights_language":"en"}]},"item_5_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"PISSN"}]},"item_5_source_id_9":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA12295836","subitem_source_identifier_type":"NCID"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"奥村, 宏典","creatorNameLang":"ja"},{"creatorName":"オクムラ, ヒロノリ","creatorNameLang":"ja-Kana"},{"creatorName":"OKUMURA, Hironori","creatorNameLang":"en"}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-06-23"}],"displaytype":"detail","filename":"JJAP_59-7-075503.pdf","filesize":[{"value":"669 KB"}],"format":"application/pdf","licensetype":"license_5","mimetype":"application/pdf","url":{"objectType":"fulltext","url":"https://tsukuba.repo.nii.ac.jp/record/2001792/files/JJAP_59-7-075503.pdf"},"version_id":"4c7514bc-c5a6-4d2f-a5c1-711fb12d2716"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy","subitem_title_language":"en"}]},"item_type_id":"5","owner":"188","path":["5135","615"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-11-05"},"publish_date":"2021-11-05","publish_status":"0","recid":"2001792","relation_version_is_last":true,"title":["Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy"],"weko_creator_id":"188","weko_shared_id":-1},"updated":"2024-04-17T01:28:08.247180+00:00"}