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Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy
http://hdl.handle.net/2241/0002001792
http://hdl.handle.net/2241/000200179281517ede-b454-49c9-ade1-bfd83995a17e
名前 / ファイル | ライセンス | アクション |
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JJAP_59-7-075503.pdf (669 KB)
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Item type | Journal Article(1) | |||||||||||
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公開日 | 2021-11-05 | |||||||||||
タイトル | ||||||||||||
言語 | en | |||||||||||
タイトル | Growth of double-barrier β-(AlGa)2O3/Ga2O3 structure and heavily Sn-doped Ga2O3 layers using molecular-beam epitaxy | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
資源タイプ | ||||||||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
タイプ | journal article | |||||||||||
アクセス権 | ||||||||||||
アクセス権 | open access | |||||||||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||
著者 |
奥村, 宏典
× 奥村, 宏典
WEKO
133158
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書誌情報 |
en : Japanese Journal of Applied Physics 巻 59, 号 7, p. 075503, 発行日 2020-07 |
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ISSN | ||||||||||||
収録物識別子タイプ | PISSN | |||||||||||
収録物識別子 | 0021-4922 | |||||||||||
書誌レコードID | ||||||||||||
収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA12295836 | |||||||||||
DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | https://doi.org/10.35848/1347-4065/ab9a8b | |||||||||||
権利 | ||||||||||||
言語 | en | |||||||||||
権利情報 | © 2020 The Japan Society of Applied Physics | |||||||||||
権利 | ||||||||||||
言語 | en | |||||||||||
権利情報 | This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ab9a8b | |||||||||||
出版タイプ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
出版者 | ||||||||||||
言語 | en | |||||||||||
出版者 | IOP Publishing | |||||||||||
出版者 | ||||||||||||
言語 | en | |||||||||||
出版者 | The Japan Society of Applied Physics |