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Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics
http://hdl.handle.net/2241/0002001718
http://hdl.handle.net/2241/000200171810c98c10-dc0a-4e49-87ea-a566929f9a61
名前 / ファイル | ライセンス | アクション |
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APL_116-182105.pdf (2.7 MB)
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Item type | Journal Article(1) | |||||||||
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公開日 | 2021-10-29 | |||||||||
タイトル | ||||||||||
言語 | en | |||||||||
タイトル | Zn-induced layer exchange of p- and n-type nanocrystalline SiGe layers for flexible thermoelectrics | |||||||||
言語 | ||||||||||
言語 | eng | |||||||||
資源タイプ | ||||||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||
タイプ | journal article | |||||||||
アクセス権 | ||||||||||
アクセス権 | open access | |||||||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
著者 |
Tsuji, M.
× Tsuji, M.
× Kusano, K.
× 末益, 崇× 都甲, 薫 |
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書誌情報 |
en : Applied Physics Letters 巻 116, 号 18, p. 182105, 発行日 2020-05 |
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ISSN | ||||||||||
収録物識別子タイプ | PISSN | |||||||||
収録物識別子 | 0003-6951 | |||||||||
書誌レコードID | ||||||||||
収録物識別子タイプ | NCID | |||||||||
収録物識別子 | AA00543431 | |||||||||
DOI | ||||||||||
関連タイプ | isIdenticalTo | |||||||||
識別子タイプ | DOI | |||||||||
関連識別子 | https://doi.org/10.1063/5.0006958 | |||||||||
権利 | ||||||||||
言語 | en | |||||||||
権利情報 | © 2020 Author(s). | |||||||||
権利 | ||||||||||
言語 | en | |||||||||
権利情報 | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 116, 182105 (2020) and may be found at https://doi.org/10.1063/5.0006958. | |||||||||
出版タイプ | ||||||||||
出版タイプ | VoR | |||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
出版者 | ||||||||||
言語 | en | |||||||||
出版者 | AIP Publishing |