WEKO3
アイテム
{"_buckets": {"deposit": "94e1fae7-86f2-4ce5-91a7-4347d39448c9"}, "_deposit": {"created_by": 14, "id": "2001674", "owner": "14", "owners": [14], "owners_ext": {"displayname": "大久保光枝", "username": "mokubo"}, "pid": {"revision_id": 0, "type": "depid", "value": "2001674"}, "status": "published"}, "_oai": {"id": "oai:tsukuba.repo.nii.ac.jp:02001674", "sets": ["1717", "494", "1086"]}, "author_link": ["663", "126"], "item_5_biblio_info_6": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2020-09", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "37", "bibliographicPageStart": "373002", "bibliographicVolumeNumber": "53", "bibliographic_titles": [{"bibliographic_title": "Journal of Physics D: Applied Physics", "bibliographic_titleLang": "en"}]}]}, "item_5_description_4": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor layers exchange during heat treatment. A great deal of effort has been put into research on the mechanism and applications of LE, which has allowed various group IV materials (Si, SiGe, Ge, GeSn and C) to form on arbitrary substrates using appropriate metal catalysts. Depending on the LE material combination and growth conditions, the resulting semiconductor layer exhibits various features: low-temperature crystallization (80 °C–500 °C), grain size control (nm to mm orders), crystal orientation control to (100) or (111) and high impurity doping (\u003e1020 cm−3). These features are useful for improving the performance, productivity and versatility of various devices, such as solar cells, transistors, thermoelectric generators and rechargeable batteries. We briefly review the findings and achievements from over 20 years of LE studies, including recent progress on device applications.", "subitem_description_language": "en", "subitem_description_type": "Abstract"}]}, "item_5_publisher_27": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "IOP Publishing", "subitem_publisher_language": "en"}]}, "item_5_relation_11": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1088/1361-6463/ab91ec", "subitem_relation_type_select": "DOI"}}]}, "item_5_rights_12": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "© 2020 The Author(s), Published by IOP Publishing Ltd Printed in the UK Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.", "subitem_rights_language": "en"}]}, "item_5_select_15": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_5_source_id_7": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0022-3727", "subitem_source_identifier_type": "PISSN"}]}, "item_5_source_id_9": {"attribute_name": "書誌レコードID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00704905", "subitem_source_identifier_type": "NCID"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "都甲, 薫", "creatorNameLang": "ja"}, {"creatorName": "トコウ, カオル", "creatorNameLang": "ja-Kana"}, {"creatorName": "TOKO, Kaoru", "creatorNameLang": "en"}], "familyNames": [{"familyName": "都甲", "familyNameLang": "ja"}, {"familyName": "トコウ", "familyNameLang": "ja-Kana"}, {"familyName": "TOKO", "familyNameLang": "en"}], "givenNames": [{"givenName": "薫", "givenNameLang": "ja"}, {"givenName": "カオル", "givenNameLang": "ja-Kana"}, {"givenName": "Kaoru", "givenNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "663", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "30611280", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000030611280"}, {"nameIdentifier": "0000003027", "nameIdentifierScheme": "筑波大学研究者総覧", "nameIdentifierURI": "http://trios.tsukuba.ac.jp/researcher/0000003027"}]}, {"creatorNames": [{"creatorName": "末益, 崇", "creatorNameLang": "ja"}, {"creatorName": "スエマス, タカシ", "creatorNameLang": "ja-Kana"}, {"creatorName": "SUEMASU, Takashi", "creatorNameLang": "en"}], "familyNames": [{"familyName": "末益", "familyNameLang": "ja"}, {"familyName": "スエマス", "familyNameLang": "ja-Kana"}, {"familyName": "SUEMASU", "familyNameLang": "en"}], "givenNames": [{"givenName": "崇", "givenNameLang": "ja"}, {"givenName": "タカシ", "givenNameLang": "ja-Kana"}, {"givenName": "Takashi", "givenNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "126", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "40282339", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000040282339"}, {"nameIdentifier": "0000000714", "nameIdentifierScheme": "筑波大学研究者総覧", "nameIdentifierURI": "http://trios.tsukuba.ac.jp/researcher/0000000714"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_access", "date": [{"dateType": "Available", "dateValue": "2021-10-25"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "JPD_53-37.pdf", "filesize": [{"value": "2.5 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_0", "mimetype": "application/pdf", "size": 2500000.0, "url": {"objectType": "fulltext", "url": "https://tsukuba.repo.nii.ac.jp/record/2001674/files/JPD_53-37.pdf"}, "version_id": "1a85bd2f-85d1-4273-bd1f-5157b7dab5a0"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Metal-induced layer exchange of group IV materials", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Metal-induced layer exchange of group IV materials", "subitem_title_language": "en"}]}, "item_type_id": "5", "owner": "14", "path": ["1717", "494", "1086"], "permalink_uri": "http://hdl.handle.net/2241/0002001674", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2021-10-25"}, "publish_date": "2021-10-25", "publish_status": "0", "recid": "2001674", "relation": {}, "relation_version_is_last": true, "title": ["Metal-induced layer exchange of group IV materials"], "weko_shared_id": -1}
Metal-induced layer exchange of group IV materials
http://hdl.handle.net/2241/0002001674
http://hdl.handle.net/2241/0002001674c24ea636-9d7a-4131-8f45-c252fdbd4abc
名前 / ファイル | ライセンス | アクション |
---|---|---|
JPD_53-37.pdf (2.5 MB)
|
Item type | Journal Article(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2021-10-25 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Metal-induced layer exchange of group IV materials | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
都甲, 薫
× 都甲, 薫× 末益, 崇 |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor layers exchange during heat treatment. A great deal of effort has been put into research on the mechanism and applications of LE, which has allowed various group IV materials (Si, SiGe, Ge, GeSn and C) to form on arbitrary substrates using appropriate metal catalysts. Depending on the LE material combination and growth conditions, the resulting semiconductor layer exhibits various features: low-temperature crystallization (80 °C–500 °C), grain size control (nm to mm orders), crystal orientation control to (100) or (111) and high impurity doping (>1020 cm−3). These features are useful for improving the performance, productivity and versatility of various devices, such as solar cells, transistors, thermoelectric generators and rechargeable batteries. We briefly review the findings and achievements from over 20 years of LE studies, including recent progress on device applications. | |||||
言語 | en | |||||
書誌情報 |
en : Journal of Physics D: Applied Physics 巻 53, 号 37, p. 373002, 発行日 2020-09 |
|||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0022-3727 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00704905 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1088/1361-6463/ab91ec | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2020 The Author(s), Published by IOP Publishing Ltd Printed in the UK Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IOP Publishing |