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  1. 数理物質系 (Faculty of Pure and Applied Sciences)
  2. 末益 崇 (Suemasu Takashi)
  1. コンテンツタイプ (Contents Type)
  2. 雑誌発表論文等 (Journal article, etc.)
  3. J~
  4. Journal of applied physics

Effect of using a high-purity Fe source on the transport properties of p-type beta-FeSi2 grown by molecular-beam epitaxy

http://hdl.handle.net/2241/104221
81282753-4ea3-43c2-b1af-cd53d14e9a02
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JAP_102-10.pdf JAP_102-10.pdf (577.1 kB)
item type Journal Article(1)
公開日 2010-01-06
タイトル
タイトル Effect of using a high-purity Fe source on the transport properties of p-type beta-FeSi2 grown by molecular-beam epitaxy
言語
言語 eng
資源タイプ
タイプ journal article
著者 Suzuno, M.

× Suzuno, M.

WEKO 66848

Suzuno, M.

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Ugajin, Y.

× Ugajin, Y.

WEKO 66849

Ugajin, Y.

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Murase, S.

× Murase, S.

WEKO 66850

Murase, S.

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Suemasu, T.

× Suemasu, T.

WEKO 66851

Suemasu, T.

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Uchikoshi, M.

× Uchikoshi, M.

WEKO 66852

Uchikoshi, M.

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Isshiki, M.

× Isshiki, M.

WEKO 66853

Isshiki, M.

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著者別名 末益, 崇

× 末益, 崇

WEKO 126
e-Rad 40282339
筑波大学研究者総覧 0000000714

末益, 崇

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抄録
内容記述 Intentionally undoped p-type beta-FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of beta-FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the beta-FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities.
書誌情報 Journal of applied physics

巻 102, 号 10, p. 103706, 発行日 2007-11-19
ISSN
収録物識別子 0021-8979
書誌レコードID
収録物識別子 AA00693547
DOI
関連識別子
関連識別子 10.1063/1.2816230
権利
権利情報 ©2007 American Institute of Physics
著者版フラグ
値 publisher
出版者
出版者 American Institute of Physics
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