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Effect of using a high-purity Fe source on the transport properties of p-type beta-FeSi2 grown by molecular-beam epitaxy
http://hdl.handle.net/2241/104221
81282753-4ea3-43c2-b1af-cd53d14e9a02
名前 / ファイル | ライセンス | Actions | |
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item type | Journal Article(1) | |||||
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公開日 | 2010-01-06 | |||||
タイトル | ||||||
タイトル | Effect of using a high-purity Fe source on the transport properties of p-type beta-FeSi2 grown by molecular-beam epitaxy | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
タイプ | journal article | |||||
著者 |
Suzuno, M.
× Suzuno, M.× Ugajin, Y.× Murase, S.× Suemasu, T.× Uchikoshi, M.× Isshiki, M. |
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著者別名 |
末益, 崇
× 末益, 崇 |
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抄録 | ||||||
内容記述 | Intentionally undoped p-type beta-FeSi2 thin films were grown on Si(111) substrates by molecular-beam epitaxy using low-purity (4N) and high-purity (5N) Fe sources to investigate the effect of using a high-purity Fe source on the electrical properties of beta-FeSi2. The hole mobility increased and the hole density decreased greatly as the annealing temperature and time were increased, particularly for the beta-FeSi2 films produced using 5N-Fe. The observed temperature dependence of the hole mobility was reproduced well by considering various carrier scattering mechanisms due to acoustic-phonon, polar-optical phonon, nonpolar-optical phonon, and ionized impurities. | |||||
書誌情報 |
Journal of applied physics 巻 102, 号 10, p. 103706, 発行日 2007-11-19 |
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ISSN | ||||||
収録物識別子 | 0021-8979 | |||||
書誌レコードID | ||||||
収録物識別子 | AA00693547 | |||||
DOI | ||||||
関連識別子 | ||||||
関連識別子 | 10.1063/1.2816230 | |||||
権利 | ||||||
権利情報 | ©2007 American Institute of Physics | |||||
著者版フラグ | ||||||
値 | publisher | |||||
出版者 | ||||||
出版者 | American Institute of Physics |