@article{oai:tsukuba.repo.nii.ac.jp:00018536,
 author = {服部, 利明 and Hattori, Toshiaki and Arai, Satoshi and Ohta, Keisuke and Mochiduki, Aya and Ookuma, Shin-ichi and Tukamoto, Keiji and Rungsawang, Rakchanok},
 journal = {Science and technology of advanced materials},
 month = {Sep},
 note = {application/pdf, Terahertz electromagnetic pulses can serve as a new and unique tool for various types of spectroscopy. We first characterized the temporal
and spatial properties of THz pulses generated from a large-aperture photoconductive antena, and then used them for the study of the ultrafast
dynamics of electrons in semiconductros. We studied the dynamics of electrons generated by femtosecond optical pulses with positive and
negative excess energies in GaAs and InP by observing the waveform of the emitted THz radiation. Subpicosecond intraband relaxation was
observed with positive excess energies. With negative excess energies, a picosecond transition from the Urbach state to free carrier states was
observed.},
 pages = {649--655},
 title = {Ultrafast semiconductor spectroscopy using terahertz electromagnetic pulses},
 volume = {6},
 year = {2005}
}