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Ultrafast semiconductor spectroscopy using terahertz electromagnetic pulses
http://hdl.handle.net/2241/104188
http://hdl.handle.net/2241/10418838c0ecfe-f3dc-4562-8544-c1037e81f39f
名前 / ファイル | ライセンス | アクション |
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STAM_6-6.pdf (266.7 kB)
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Item type | Journal Article(1) | |||||
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公開日 | 2009-12-24 | |||||
タイトル | ||||||
タイトル | Ultrafast semiconductor spectroscopy using terahertz electromagnetic pulses | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
著者 |
Hattori, Toshiaki
× Hattori, Toshiaki× Arai, Satoshi× Ohta, Keisuke× Mochiduki, Aya× Ookuma, Shin-ichi× Tukamoto, Keiji× Rungsawang, Rakchanok |
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著者別名 |
服部, 利明
× 服部, 利明 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Terahertz electromagnetic pulses can serve as a new and unique tool for various types of spectroscopy. We first characterized the temporal and spatial properties of THz pulses generated from a large-aperture photoconductive antena, and then used them for the study of the ultrafast dynamics of electrons in semiconductros. We studied the dynamics of electrons generated by femtosecond optical pulses with positive and negative excess energies in GaAs and InP by observing the waveform of the emitted THz radiation. Subpicosecond intraband relaxation was observed with positive excess energies. With negative excess energies, a picosecond transition from the Urbach state to free carrier states was observed. |
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書誌情報 |
Science and technology of advanced materials 巻 6, p. 649-655, 発行日 2005-09 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1468-6996 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11561821 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1016/j.stam.2005.04.009 | |||||
権利 | ||||||
権利情報 | ©2005 Elsevier Ltd | |||||
著者版フラグ | ||||||
値 | author | |||||
出版者 | ||||||
出版者 | Elsevier Ltd | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2241/104188 | |||||
識別子タイプ | HDL | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf |